Within its rich phase diagram titanium dioxide is a truly multifunctional material with a
property palette that has been shown to span from dielectric to transparent-conducting …

Deposition of thin films with desired compositions, conformality and bonding to substrates is
a key component in nanotechnology research. The growth of metal films by atomic layer …

Atomic layer deposition (ALD) is an attractive method to deposit thin films for advanced
technological applications such as microelectronics and nanotechnology. One material …

Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of
nickel-containing films. The precursors have the general formula Ni (R-DAD) 2, wherein R …

A composition comprising dihydropyrazinyl anions that can be coordinated as 6 electron
ligands to a broad range of different metals to yield volatile metal complexes for ALD and …

The atomic layer deposition (ALD) of Ru using a metal–organic precursor, tricarbonyl
(trimethylenemethane) ruthenium [Ru (TMM)(CO) 3] and O2 as a reactant is reported. The …

Atomic layer deposition (ALD) processes are reported for ruthenium (Ru) and ruthenium
oxide (RuO2) using a zero-oxidation state liquid precursor, η4-2, 3-dimethylbutadiene …

Atomic layer deposition (ALD) is a thin film deposition technique which operates via
repeated alternating and self-terminating surface-based reactions between a precursor and …

Inherent substrate selectivity is reported for the thermal RuO4 (ToRuS)/H2 gas atomic layer
deposition (ALD) process on H-terminated Si (Si–H) versus SiO2. In situ spectroscopic …

Ruthenium (Ru) thin films were grown on thermally-grown SiO 2 substrates using atomic
layer deposition (ALD) by a sequential supply of (ethylbenzene)(1, 3-cyclohexadiene) Ru …