Intra-cavity spectroscopy with diode lasers

VM Baev, J Eschner, E Paeth, R Schüler, PE Toschek - Applied Physics B, 1992 - Springer
A multi-mode diode laser with an external cavity is studied experimentally and theoretically
for its application to intra-cavity spectroscopy. One facet of a typical Ga 0.89 Al 0.11 As laser …

Refractive index of sputtered silicon oxynitride layers for antireflection coating

M Serényi, M Rácz, T Lohner - Vacuum, 2001 - Elsevier
Silicon nitride and silicon oxynitride dielectric layers were fabricated by reactive RF
sputtering from an Si target in conventional equipment. Sputtering was done using a gas …

Fabrication and performance of 1.5 μm GaInAsP travelling-wave laser amplifiers with angled facets

CE Zah, JS Osinski, C Caneau, SG Menocal, LA Reith… - Electronics Letters, 1987 - IET
A broadband 1.5 μm GaInAsP travelling-wave laser ampli-fier has been realised with angled
facets instead of anti-reflection coatings. The measured signal gain for the TE mode is 19dB …

Intracavity photoacoustic gas detection with an external cavity diode laser

Z Bozóki, J Sneider, G Szabó, A Miklós, M Serényi… - Applied Physics B, 1996 - Springer
The first use of an external cavity diode-laser light source in combination with a
photoacoustic detector for high-sensitivity gas detection is described. This combined system …

Bandwidth-limited picosecond pulse generation in an actively mode-locked GaAs laser with intracavity chirp compensation

J Kuhl, M Serényi, EO Göbel - Optics letters, 1987 - opg.optica.org
Bandwidth-limited picosecond pulse generation in an actively mode-locked GaAs laser with
intracavity chirp compensation clickable element to expand a topic LOGIN OR CREATE …

A high-sensitivity, near-infrared tunable-diode-laser-based photoacoustic water-vapour-detection system for automated operation

Z Bozóki, J Sneider, Z Gingl, A Mohácsi… - Measurement …, 1999 - iopscience.iop.org
A photoacoustic sensor system for automatic detection of low concentrations of water vapour
is described in this paper. A Littman-configuration external-cavity diode laser operating at …

1.3 μm GaInAsP near-travelling-wave laser amplifiers made by combination of angled facets and antireflection coatings

CE Zah, C Caneau, FK Shokoohi, SG Menocal… - Electronics Letters, 1988 - IET
1.3 μm GaInAsP near-travelling-wave laser amplifiers have been realised by the
combination of angled facets and antireflection coatings. Without in situ monitoring on the …

Refractive index control of silicon nitride films prepared by radio-frequency reactive sputtering

PS Nayar - Journal of Vacuum Science & Technology A: Vacuum …, 2002 - pubs.aip.org
Silicon nitride films were prepared on polished silicon wafers by radio-frequency reactive
sputtering using a silicon target in nitrogen–argon plasma. The deposition rate was …

Synthesis and physicochemical characterization of silicon oxynitride thin films prepared by rf magnetron sputtering

L Pinard, JM Mackowski - Applied optics, 1997 - opg.optica.org
SiO_xN_y thin films deposited by rf magnetron sputtering to realize low-loss optical
multilayers have been studied. We have analyzed the variations of the optical and …

Design equations to realise a broadband hybrid ring or a two-branch guide coupler of any coupling coefficient

JV Ashforth - Electronics letters, 1988 - IET
Design equations to realise a broadband hybrid ring or a two-branch guide coupler of any
coupling coefficient Page 1 coatings, the effective modal facet reflectivity of angled facets is …