Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
V Miikkulainen, M Leskelä, M Ritala… - Journal of Applied …, 2013 - pubs.aip.org
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …
suitable for depositing uniform and conformal films on complex three-dimensional …
Integrations and challenges of novel high-k gate stacks in advanced CMOS technology
G He, L Zhu, Z Sun, Q Wan, L Zhang - Progress in Materials Science, 2011 - Elsevier
Due to the limitations in conventional complementary metal–oxide–semiconductor (CMOS)
scaling technology in recent years, innovation in transistor structures and integration of …
scaling technology in recent years, innovation in transistor structures and integration of …
Electronic band structure of zirconia and hafnia polymorphs from the perspective
The electronic structure of crystalline ZrO 2 and HfO 2 in the cubic, tetragonal, and
monoclinic phase has been investigated using many-body perturbation theory in the GW …
monoclinic phase has been investigated using many-body perturbation theory in the GW …
Band offsets of ultrathin high- oxide films with Si
Valence-and conduction-band edges of ultrathin oxides (SiO 2, HfO 2, Hf 0.7 Si 0.3 O 2, ZrO
2, and Al 2 O 3) grown on a silicon substrate have been measured using ultraviolet …
2, and Al 2 O 3) grown on a silicon substrate have been measured using ultraviolet …
Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
We determined the band alignment of a graphene-insulator-semiconductor structure using
internal photoemission spectroscopy. From the flatband voltage and Dirac voltage, we infer …
internal photoemission spectroscopy. From the flatband voltage and Dirac voltage, we infer …
Modified Tauc–Lorentz dispersion model leading to a more accurate representation of absorption features below the bandgap
DV Likhachev, N Malkova, L Poslavsky - Thin Solid Films, 2015 - Elsevier
We reviewed studies reporting the applications of the Tauc–Lorentz (TL) parameterization
for the complex dielectric function in spectroscopic ellipsometry. Since this model became …
for the complex dielectric function in spectroscopic ellipsometry. Since this model became …
[图书][B] Metrology and Diagnostic Techniques for Nanoelectronics
Z Ma, DG Seiler - 2017 - taylorfrancis.com
Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment
NV Nguyen, OA Kirillov, W Jiang, W Wang… - Applied Physics …, 2008 - pubs.aip.org
The metal gate/high-k dielectric/III-V semiconductor band alignment is one of the most
technologically important parameters. We report the band offsets of the Al/Al 2 O 3/GaAs …
technologically important parameters. We report the band offsets of the Al/Al 2 O 3/GaAs …
A solution-processed high-efficiency p-NiO/n-ZnO heterojunction photodetector
This paper presents a high efficiency heterojunction p-NiO/n-ZnO thin film ultraviolet (UV)
photodetector (PD) fabricated on conductive glass substrates. The devices are fabricated by …
photodetector (PD) fabricated on conductive glass substrates. The devices are fabricated by …
Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature
IZ Mitrovic, M Althobaiti, AD Weerakkody… - Journal of Applied …, 2014 - pubs.aip.org
A study into the optimal deposition temperature for ultra-thin La 2 O 3/Ge and Y 2 O 3/Ge
gate stacks has been conducted in this paper with the aim to tailor the interfacial layer for …
gate stacks has been conducted in this paper with the aim to tailor the interfacial layer for …