Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main
key for continuous progress in silicon-based semiconductor industry over the past three …

Stress-induced leakage current SILC in ultrathin oxide metal–oxide–semiconductor devices
has been quantitatively modeled by the trap-assisted tunneling mechanism. These results …

Abstract Negative‐differential‐resistance (NDR) devices offer a promising pathway for
developing future computing technologies characterized by exceptionally low energy …

In this paper, our goal is to efficiently solve the Vlasov equation on GPUs. A semi-
Lagrangian discontinuous Galerkin scheme is used for the discretization. Such kinetic …

0.1/spl mu/m InGaAs/InAlAs/InP HEMT MMIC technology on 3-inch InP substrates has been
qualified in the categories of three-temperature lifetest, gamma radiation, RF survivability …

Fundamental limits on energy use in optical networks Page 1 Fundamental Limits on Energy
Use in Optical Networks DC Kilper(1), D. Neilson(1), D. Stiliadis(2), D. Suvakovic(2), S …

Etch characteristics and mechanisms of TiSbTe thin films in inductively coupled HBr-He, HBr-
Ar, HBr-N 2, and HBr-O 2 plasmas were studied in this paper. The etch rate of TiSbTe thin …

The high-reliability performance of MMIC amplifiers fabricated using 0.1/spl mu/m T-gate on
both AlGaAs/InGaAs/GaAs and InGaAs/InAlAs/InP HEMTs is reported. Operating at an …

6. CONCLUSIONS As dimensional scaling of CMOS transistors is reaching its fundamental
limits, various researches have been actively carried out to find an alternative way to …

We present the TANOS (Si-Oxide-SiN-Al2O3-TaN) cell with 40 Å-thick tunnel oxide erased
by Fowler-Nordheim (FN) tunneling of hole. Thanks to introducing high-k dielectrics, alumina …