SONOS type two-bit FinFET flash memory cell
JR Hwang, MH Chi, FL Yang - US Patent 7,589,387, 2009 - Google Patents
A 2-bit FinFET flash memory cell capable of storing 2 bits and a method of forming the same
are provided. The memory cell includes a semiconductor fin on a top surface of a substrate …
are provided. The memory cell includes a semiconductor fin on a top surface of a substrate …
NROM memory cell, memory array, related devices and methods
KD Prall, L Forbes - US Patent 7,535,048, 2009 - Google Patents
US7535048B2 - NROM memory cell, memory array, related devices and methods - Google
Patents US7535048B2 - NROM memory cell, memory array, related devices and methods …
Patents US7535048B2 - NROM memory cell, memory array, related devices and methods …
Flash memory having a high-permittivity tunnel dielectric
L Forbes - US Patent 7,157,769, 2007 - Google Patents
A high permittivity tunneling dielectric is used in a flash memory cell to provide greater
tunneling current into the floating gate with smaller gate voltages. The flash memory cell has …
tunneling current into the floating gate with smaller gate voltages. The flash memory cell has …
Comparative study of field effect transistor based biosensors
A comparative study of biosensors based on a field effect transistor (FET) configuration is
conducted using numerical analysis. A conventional back-gated device and three different …
conducted using numerical analysis. A conventional back-gated device and three different …
Vertical NROM NAND flash memory array
L Forbes - US Patent 7,339,239, 2008 - Google Patents
Memory devices are typically provided as internal storage areas in the computer. The term
memory identifies data storage that comes in the form of integrated circuit chips. There are …
memory identifies data storage that comes in the form of integrated circuit chips. There are …
Fully depleted silicon-on-insulator CMOS logic
L Forbes - US Patent 6,830,963, 2004 - Google Patents
6,147.904 A 6,157,570 A 6,172,396 B1 6,174,758 B1 6,175,523 B1 6,181,597 B1 6,184,089
B1 6,201,282 B1 6,201,737 B1 6,204,529 B1 6,207,504 B1 6,208,557 B1 6.215, 702 B1 …
B1 6,201,282 B1 6,201,737 B1 6,204,529 B1 6,207,504 B1 6,208,557 B1 6.215, 702 B1 …
NROM flash memory with a high-permittivity gate dielectric
L Forbes - US Patent 7,221,018, 2007 - Google Patents
A high permittivity gate dielectric is used in an NROM memory cell. The gate dielectric has a
dielectric constant greater than silicon dioxide and is comprised of an atomic layer deposited …
dielectric constant greater than silicon dioxide and is comprised of an atomic layer deposited …
Fully depleted silicon-on-insulator CMOS logic
L Forbes - US Patent 7,078,770, 2006 - Google Patents
(57) ABSTRACT A extractor implanted region is used in a silicon-on-insulator CMOS
memory device. The extractor region is reversed biased to remove minority carriers from the …
memory device. The extractor region is reversed biased to remove minority carriers from the …
Multi-state memory cell with asymmetric charge trapping
K Prall - US Patent 7,616,482, 2009 - Google Patents
A multi-state NAND memory cell includes two drain/source areas in a substrate. An oxide-
nitride-oxide structure is formed above the substrate between the drain/source areas. The …
nitride-oxide structure is formed above the substrate between the drain/source areas. The …
Spatial Distribution of Charge Traps in a SONOS-Type Flash Memory Using a High- Trapping Layer
G Zhang, XP Wang, WJ Yoo… - IEEE transactions on …, 2007 - ieeexplore.ieee.org
A time-dependent analytical method based on effective traps in a modified equivalent oxide
thickness (EOT) model has been proposed for Flash memory studies, which reflects the …
thickness (EOT) model has been proposed for Flash memory studies, which reflects the …