Review of Si-based GeSn CVD growth and optoelectronic applications
Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth
Recent development of group-IV alloy GeSn indicates its bright future for the application of
mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition …
mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition …
SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
Recent studies of SiGeSn materials and optoelectronic devices hold great promise for
photonics integrated circuits (PICs) on Si platform featuring scalable, cost-effective, and …
photonics integrated circuits (PICs) on Si platform featuring scalable, cost-effective, and …
Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3%
The recent demonstration of the GeSn laser opened a promising route towards the
monolithic integration of light sources on the Si platform. A GeSn laser with higher Sn …
monolithic integration of light sources on the Si platform. A GeSn laser with higher Sn …
Crystalline GeSn growth by plasma enhanced chemical vapor deposition
Single crystalline GeSn growth on Si substrate was successfully demonstrated by using
plasma enhanced chemical vapor deposition (PE-CVD) with commercially available GeH_4 …
plasma enhanced chemical vapor deposition (PE-CVD) with commercially available GeH_4 …
[HTML][HTML] Direct bandgap type-I GeSn/GeSn quantum well on a GeSn-and Ge-buffered Si substrate
This paper reports the comprehensive characterization of a Ge 0.92 Sn 0.08/Ge 0.86 Sn
0.14/Ge 0.92 Sn 0.08 single quantum well. By using a strain relaxed Ge 0.92 Sn 0.08 buffer …
0.14/Ge 0.92 Sn 0.08 single quantum well. By using a strain relaxed Ge 0.92 Sn 0.08 buffer …
Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
GeSn-based quantum wells (QWs) are of great interests for the development of all-group-IV
optoelectronic devices such as lasers. Using a GeSn buffer and SiGeSn barrier has been …
optoelectronic devices such as lasers. Using a GeSn buffer and SiGeSn barrier has been …
[HTML][HTML] Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics
Recent progress on (Si) GeSn optoelectronic devices holds great promise for photonic
integration on Si substrates. In parallel to the development of bulk devices,(Si) GeSn-based …
integration on Si substrates. In parallel to the development of bulk devices,(Si) GeSn-based …
Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
In this work, a SiGeSn/GeSn/SiGeSn single quantum well was grown and characterized. The
sample has a thicker GeSn well of 22nm compared to a previously reported 9nm well …
sample has a thicker GeSn well of 22nm compared to a previously reported 9nm well …
Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement
The GeSn-based quantum wells (QWs) have been investigated recently for the development
of efficient GeSn emitters. Although our previous study indicated that the direct bandgap well …
of efficient GeSn emitters. Although our previous study indicated that the direct bandgap well …