Beta-phase gallium oxide (β-Ga 2 O 3) has exceptional electronic properties with vast
potential in power and radio frequency electronics. Despite the excellent demonstrations of …

In this work, we report a single crystalline p-Si/(001)-Ga2O3 heterojunction diode fabricated
using semiconductor grafting technology. The diode showed a breakdown voltage (of~ 0.86 …

The $\beta $-Ga $ _2 $ O $ _3 $ has exceptional electronic properties with vast potential in
power and RF electronics. Despite the excellent demonstrations of high-performance …

In this work, we show that by growing AlGaN nanowires with molecular beam epitaxy (MBE)
in a Ga highly desorbing regime, light-emitting diodes that can emit light at 209 nm are …

Inorganic semiconductor‐based nano/micro‐membranes are of great interest and can be
used as active materials for high‐performance and flexible electronics, due to their unique …

The recently demonstrated semiconductor grafting approach allows one to create an abrupt,
low interface-trap-density heterojunction between a high-quality p-type single-crystalline …

The chelating aluminum complex [2-(Me2NCH2) C2B10H10] AlX2 (X= Br 3, CH3 4) was
synthesized using 2-dimethylaminomethyl-o-carboranyl lithium (LiCabN, 2) with aluminum …

Aluminum nitride (AlN) piezoelectric films are essential for bulk acoustic wave (BAW) filters
operating at super high frequency (SHF). In this paper, the single crystal AlN template is …

Differential thermal analysis (DTA) and differential thermal gravimetry (DTG) studies at
different heating rates of were considered for AlN nanoparticles. The free Gibbs energy in …