Roadmap for ferroelectric domain wall nanoelectronics

P Sharma, TS Moise, L Colombo… - Advanced Functional …, 2022 - Wiley Online Library
Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to
electronic properties distinct from the bulk that can also be electrically programmed. These …

2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware

L Tong, Z Peng, R Lin, Z Li, Y Wang, X Huang, KH Xue… - Science, 2021 - science.org
In neuromorphic hardware, peripheral circuits and memories based on heterogeneous
devices are generally physically separated. Thus, exploration of homogeneous devices for …

Advances in Emerging Photonic Memristive and Memristive‐Like Devices

W Wang, S Gao, Y Wang, Y Li, W Yue, H Niu… - Advanced …, 2022 - Wiley Online Library
Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic
memristive and memristive‐like devices exhibit an attractive future in constructing novel …

In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO3 Interfaces

J Sun, Y Li, Y Ou, Q Huang, X Liao… - Advanced Functional …, 2022 - Wiley Online Library
Direct data processing in nonvolatile memories can enable area‐and energy‐efficient
computation, unlike independent performance between separate processing and memory …

Domain Dynamics and Resistive Switching in Ferroelectric Al1–xScxN Thin Film Capacitors

H Lu, G Schönweger, A Petraru… - Advanced Functional …, 2024 - Wiley Online Library
In this paper, using a combination of pulse testing measurements and piezoresponse force
microscopy (PFM), an investigation of the polarization reversal behavior and the …

Analog ferroelectric domain-wall memories and synaptic devices integrated with Si substrates

C Wang, T Wang, W Zhang, J Jiang, L Chen, A Jiang - Nano Research, 2022 - Springer
Brain-inspired neuromorphic computing can overcome the energy and throughput
limitations of traditional von Neumann-type computing systems, which requires analog …

Ultrahigh carrier mobilities in ferroelectric domain wall corbino cones at room temperature

CJ McCluskey, MG Colbear, JPV McConville… - Advanced …, 2022 - Wiley Online Library
Recently, electrically conducting heterointerfaces between dissimilar band insulators (such
as lanthanum aluminate and strontium titanate) have attracted considerable research …

Ferroelectric domain wall memory and logic

J Sun, AQ Jiang, P Sharma - ACS Applied Electronic Materials, 2023 - ACS Publications
Powered by big data and artificial intelligence, data-centric innovations are bringing about
transformative societal changes and are expected to continue to meteorically rise for the …

State of the Art in Crystallization of LiNbO3 and Their Applications

K Chen, Y Zhu, Z Liu, D Xue - Molecules, 2021 - mdpi.com
Lithium niobate (LiNbO3) crystals are important dielectric and ferroelectric materials, which
are widely used in acoustics, optic, and optoelectrical devices. The physical and chemical …

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

Y Wang, X Bai, J Chu, H Wang, G Rao… - Advanced …, 2020 - Wiley Online Library
Power consumption is one of the most challenging bottlenecks for complementary metal‐
oxide–semiconductor integration. Negative‐capacitance field‐effect transistors (NC‐FETs) …