Roadmap for ferroelectric domain wall nanoelectronics
Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to
electronic properties distinct from the bulk that can also be electrically programmed. These …
electronic properties distinct from the bulk that can also be electrically programmed. These …
2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware
In neuromorphic hardware, peripheral circuits and memories based on heterogeneous
devices are generally physically separated. Thus, exploration of homogeneous devices for …
devices are generally physically separated. Thus, exploration of homogeneous devices for …
Advances in Emerging Photonic Memristive and Memristive‐Like Devices
Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic
memristive and memristive‐like devices exhibit an attractive future in constructing novel …
memristive and memristive‐like devices exhibit an attractive future in constructing novel …
In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO3 Interfaces
Direct data processing in nonvolatile memories can enable area‐and energy‐efficient
computation, unlike independent performance between separate processing and memory …
computation, unlike independent performance between separate processing and memory …
Domain Dynamics and Resistive Switching in Ferroelectric Al1–xScxN Thin Film Capacitors
H Lu, G Schönweger, A Petraru… - Advanced Functional …, 2024 - Wiley Online Library
In this paper, using a combination of pulse testing measurements and piezoresponse force
microscopy (PFM), an investigation of the polarization reversal behavior and the …
microscopy (PFM), an investigation of the polarization reversal behavior and the …
Analog ferroelectric domain-wall memories and synaptic devices integrated with Si substrates
Brain-inspired neuromorphic computing can overcome the energy and throughput
limitations of traditional von Neumann-type computing systems, which requires analog …
limitations of traditional von Neumann-type computing systems, which requires analog …
Ultrahigh carrier mobilities in ferroelectric domain wall corbino cones at room temperature
CJ McCluskey, MG Colbear, JPV McConville… - Advanced …, 2022 - Wiley Online Library
Recently, electrically conducting heterointerfaces between dissimilar band insulators (such
as lanthanum aluminate and strontium titanate) have attracted considerable research …
as lanthanum aluminate and strontium titanate) have attracted considerable research …
Ferroelectric domain wall memory and logic
J Sun, AQ Jiang, P Sharma - ACS Applied Electronic Materials, 2023 - ACS Publications
Powered by big data and artificial intelligence, data-centric innovations are bringing about
transformative societal changes and are expected to continue to meteorically rise for the …
transformative societal changes and are expected to continue to meteorically rise for the …
State of the Art in Crystallization of LiNbO3 and Their Applications
K Chen, Y Zhu, Z Liu, D Xue - Molecules, 2021 - mdpi.com
Lithium niobate (LiNbO3) crystals are important dielectric and ferroelectric materials, which
are widely used in acoustics, optic, and optoelectrical devices. The physical and chemical …
are widely used in acoustics, optic, and optoelectrical devices. The physical and chemical …
Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors
Power consumption is one of the most challenging bottlenecks for complementary metal‐
oxide–semiconductor integration. Negative‐capacitance field‐effect transistors (NC‐FETs) …
oxide–semiconductor integration. Negative‐capacitance field‐effect transistors (NC‐FETs) …