Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-
quality semiconductor devices. It discusses the most important aspects of the MBE …

Reflection high-energy electron diffraction (RHEED) is the analytical tool of choice for
characterizing thin films during growth by molecular beam epitaxy, since it is very sensitive …

Strong intensity oscillations have been found in RHEED during epitaxial growth at 77 K. This
temperature is too low for thermally activated diffusion and establishes that the deposited …

The main topics of the workshop, Reflection High Energy Electron Diffraction (RHEED) and
Reflection Electron Microscopy (REM), have a common basis in the diffraction processes …

A Monte Carlo simulation of Si (001) crystal growth and surface reconstruction during
molecular beam epitaxy is described. The simulation is based on the solid-on-solid model …

Oscillations in the intensity of the specular beam in reflection high energy electron diffraction
(RHEED) have been observed during the epitaxial growth of Cu on Cu (100) and face …

We previously reported the first observation of RHEED-intensity oscillations of the specular
beam during Si MBE growth on Si (001), which showed a monatomic-layer-mode …

The crystallization behavior, the surface structure, and the nanomechanical properties of a
semiconducting polymer play a crucial role in understanding the charge injection process …

Intensity oscillations, spot profiles and rocking curves of the (00) rod in reflection high-
energy electron diffraction (RHEED) during the growth of Ge on the Ge (111) surface are …

It is generally recognized that molecular beam epitaxy (MBE) technology has a number of
advantages over conventional growth methods. For example, the real-time in-situ analysis of …