Abstract 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐
frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local …

As the wide band-gap semiconductor materials, single crystal diamond, SiC, GaN are the
key in semiconductor fields. Due to the high hardness, high brittleness and strong chemical …

A chemical mechanical polishing (CMP) method of single-crystal SiC is proposed based on
metal electrochemical corrosion. The oxidation mechanism of SiC by electrochemical …

Abstract Magnetic particles (Fe 3 O 4/CIP) in magnetorheological elastomer (MRE) were
used as solid-phase catalysts in the heterogeneous Fenton reaction for chemical …

A magnetorheological electro-Fenton composite polishing technique is proposed to achieve
high-efficiency polishing of GaN. In this study, polishing is simulated using a …

Polycrystalline diamond (PCD) has ultra-high thermal conductivity and is suitable for use as
a thermal substrate material for semiconductor power devices. However, the high hardness …

Chemical mechanical polishing (CMP) of SiC wafer is challenging due to its extreme
hardness and inertness. Catalyst assisted CMP is a cost-effective approach to increase …

Polycrystalline diamonds (PCD) has high thermal conductivity and as heat sinks in
semiconductor power devices. However, PCD exhibits high hardness and strong chemical …

The Electro-Fenton (E-Fenton) technique has shown great potential in wastewater treatment,
while the sustainable and continuing supply of Fe2+ remains challenging. Herein, we …

Chemical mechanical polishing (CMP) is widely used as an ultra-precision machining
technology, which determines the final fabrication accuracy of the device. CeO 2 abrasives …