Performance investigation of dual trench split-control-gate MOSFET as hydrogen gas sensor: A catalytic metal gate approach

R Ghosh - IEEE Sensors Letters, 2023 - ieeexplore.ieee.org
In this letter, dual trench split-control-gate MOSFET based hydrogen gas sensor considering
catalytic palladium metal gate approach is simulated using SILVACO ATLAS TCAD. The …

Design and analysis of ferro electric-tunneling junction-VTFET for RF/analog and linear application

S Singh - Silicon, 2022 - Springer
In this paper a new ferro material embedded structure is introduced between the tunneling
junction to gain and improve ON/OFF current ratio with steeper subthreshold slope. Various …

Hetero-gate dielectric SiGe/Si tunnel FET: a hydrogen gas sensor with improved sensitivity

S Dash, SK Mohanty, GP Mishra - Journal of Computational Electronics, 2023 - Springer
A new p-type Si0. 6Ge0. 4/Si TFET transducer sensor with hetero-gate dielectric engineering
(HGD-SiGe-TFET) is proposed. The combination of low bandgap source Si0. 6Ge0. 4 and …

Design and simulation-based analysis of triple metal gate with ferroelectric-SiGe heterojunction based vertical TFET for Performance Enhancement

S Singh, R Gupta, Priyanka, R Singh, SK Bhalla - Silicon, 2022 - Springer
In this work, a triple metal gate-ferroelectric material-with SiGe heterojunction based vertical
structure of Tunnel field effect transistor (TMG-FE-SiGe-VTFET) is proposed and …

Catalytic Metal‐Gated Nano‐Sheet Field Effect Transistor and Nano‐Sheet Tunnel Field Effect Transistor Based Hydrogen Gas Sensor‐A Design Perspective

G Bansal, A Tiwari, B Majumdar… - Advanced Theory …, 2024 - Wiley Online Library
In this work, for the first time, the catalytic metal gate (CMG) based nanosheet Field Effect
Transistor (NSFET) and nanosheet Tunnel Field Effect Transistor (NSTFET) are proposed for …

Comparative analysis of Change plasma and Junctionless Ferroelectric tunneling junction of VTFET for improved performance

S Singh - Silicon, 2023 - Springer
The effect of ferroelectric material at tunneling junction is compared for the two different
configuration of Charge plasma and Junctionless of Vertical TFET structure. Various …

Design and Comparative Analysis of Gate Stack Silicon Doped HfO2 Ferroelectric Vertical TFET

R Gupta, S Beg, S Singh - Silicon, 2022 - Springer
In this work, a gate stack Silicon doped HfO2 ferroelectric vertical TFET is proposed and its
various performance parameters are investigated and compared with the high-K HfO2 …

Design and Performance Analysis of Negative Capacitance Effect in the Charge Plasma-Based Junction-Less Vertical TFET Structure.

S Singh, J Singh - Nano, 2023 - search.ebscohost.com
In this paper, a negative capacitance (NC) effect in series with normal oxide capacitance is
first time introduced to design negative capacitance charge plasma-based junction less …

Linearity and noise evaluation based analysis of extended source heterojunction double gate tunnel FET

S Singh, S Wairya - Micro and Nanostructures, 2024 - Elsevier
This research work evaluates a performance analysis of heterostructure (SiGe/Si) double
gate extended source Tunnel FET (Hetero-ES-TFET) to enhance the analog performance …

[HTML][HTML] EVALUATING THE PERFORMANCE OF TRIPLE AND DOUBLE METAL GATE CHARGE PLASMA TRANSISTORS FOR APPLICATIONS IN BIOLOGICAL …

A Singh, R Kumar - Measurement: Sensors, 2024 - Elsevier
Background Biosensors have become essential tools in biotechnology, environmental
monitoring, and healthcare industries due to their ability to detect and analyze biological …