Plasma etching: Yesterday, today, and tomorrow
VM Donnelly, A Kornblit - Journal of Vacuum Science & Technology A, 2013 - pubs.aip.org
The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the
technique of physical sputtering, was introduced to integrated circuit manufacturing as early …
technique of physical sputtering, was introduced to integrated circuit manufacturing as early …
A brief review of dual-frequency capacitively coupled discharges
Capacitively coupled plasmas (CCPs) have been widely used in thin film deposition and
etching in a variety of industries such as those of semi-conductor/microelectronics, flat panel …
etching in a variety of industries such as those of semi-conductor/microelectronics, flat panel …
Plasma etching of high aspect ratio features in SiO2 using Ar/C4F8/O2 mixtures: A computational investigation
Plasma etching of high aspect ratio (HAR) features, typically vias, is a critical step in the
fabrication of high capacity memory. With aspect ratios (ARs) exceeding 50 (and …
fabrication of high capacity memory. With aspect ratios (ARs) exceeding 50 (and …
Foundations of atomic-level plasma processing in nanoelectronics
K Arts, S Hamaguchi, T Ito, K Karahashi… - Plasma Sources …, 2022 - iopscience.iop.org
This article discusses key elementary surface-reaction processes in state-of-the-art plasma
etching and deposition relevant to nanoelectronic device fabrication and presents a concise …
etching and deposition relevant to nanoelectronic device fabrication and presents a concise …
Pattern dependent profile distortion during plasma etching of high aspect ratio features in SiO2
S Huang, S Shim, SK Nam, MJ Kushner - Journal of Vacuum Science & …, 2020 - pubs.aip.org
As aspect ratios of features in microelectronics fabrication increase to beyond 100,
transferring patterns using plasma etching into underlying materials becomes more …
transferring patterns using plasma etching into underlying materials becomes more …
Secondary electrons in dual-frequency capacitive radio frequency discharges
Two fundamentally different types of dual-frequency (DF) capacitively coupled radio
frequency discharges can be used for plasma processing applications to realize separate …
frequency discharges can be used for plasma processing applications to realize separate …
High energy electron fluxes in dc-augmented capacitively coupled plasmas. II. Effects on twisting in high aspect ratio etching of dielectrics
M Wang, MJ Kushner - Journal of Applied Physics, 2010 - pubs.aip.org
In high aspect ratio (HAR) plasma etching of holes and trenches in dielectrics, sporadic
twisting is often observed. Twisting is the randomly occurring divergence of a hole or trench …
twisting is often observed. Twisting is the randomly occurring divergence of a hole or trench …
Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective
K Ishikawa, T Ishijima, T Shirafuji… - Japanese Journal of …, 2019 - iopscience.iop.org
In this review, we discuss the progress of emerging dry processes with atomic precision.
Researchers in the field of plasma processing and surface science have addressed the …
Researchers in the field of plasma processing and surface science have addressed the …
Voltage waveform tailoring in radio frequency plasmas for surface charge neutralization inside etch trenches
The etching of sub micrometer high-aspect-ratio (HAR) features into dielectric materials in
low pressure radio frequency technological plasmas is limited by the accumulation of …
low pressure radio frequency technological plasmas is limited by the accumulation of …
An approach to reduce surface charging with cryogenic plasma etching using hydrogen-fluoride contained gases
SN Hsiao, M Sekine, K Ishikawa, Y Iijima… - Applied Physics …, 2023 - pubs.aip.org
The surface conductivity influences the etched pattern profiles in the plasma process. In the
dielectric film etching, it is vital to reduce the charging build-up, which bends the trajectory of …
dielectric film etching, it is vital to reduce the charging build-up, which bends the trajectory of …