A key material system for opto-and high-power electronics are III-nitrides. Their functionality
can be expanded when bandgap engineering is extended beyond common materials such …

Boron (B) containing III-nitride materials, such as wurtzite (wz)(B, Ga) N alloys, have recently
attracted significant interest due to their ability to tailor the electronic and optical properties of …

The desire to access new alloys with desirable properties for semiconductor devices has
moved the field of semiconductor epitaxial growth into the region of metastable alloys, ie …

In this study, vertical-type thick BGaN PIN diodes were successfully fabricated to improve the
neutron capture rate of BGaN diodes by improving the BGaN epitaxial growth technique. In …

This work studies the lattice-matched AlInN/GaN high-electron mobility transistor (HEMT)
with BGaN buffer in drain-current (DC) and radio-frequency (RF) characteristics in theory …

Laser assisted atom probe tomography is used to characterize the alloy distribution in
BGaN. The effect of the evaporation conditions applied on the atom probe specimens on the …

Abstract AlGaN/GaN/Si high electron mobility transistors (HEMTs) developed by molecular
beam epitaxy (MBE) are studied with several methods for characterization, the most utilized …

In this study, we developed a new neutron-detection device using a boron gallium nitride
(BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium …

Growth of BGaN epitaxial layers by metalorganic chemical vapor deposition (MOCVD) using
triethylboron (TEB) as a boron source was studied on 6H-SiC substrate and on GaN and AlN …

This work investigates the multiple quantum well ultraviolet light emitting diode (LED) with
AlGaN/BGaN/AlGaN active stack layers. The thickness and the boron concentration of BGaN …