[HTML][HTML] Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters
R Kudrawiec, D Hommel - Applied Physics Reviews, 2020 - pubs.aip.org
A key material system for opto-and high-power electronics are III-nitrides. Their functionality
can be expanded when bandgap engineering is extended beyond common materials such …
can be expanded when bandgap engineering is extended beyond common materials such …
[HTML][HTML] Electronic and optical properties of boron-containing GaN alloys: The role of boron atom clustering
Boron (B) containing III-nitride materials, such as wurtzite (wz)(B, Ga) N alloys, have recently
attracted significant interest due to their ability to tailor the electronic and optical properties of …
attracted significant interest due to their ability to tailor the electronic and optical properties of …
Epitaxial growth of metastable semiconductor alloys
GB Stringfellow - Journal of Crystal Growth, 2021 - Elsevier
The desire to access new alloys with desirable properties for semiconductor devices has
moved the field of semiconductor epitaxial growth into the region of metastable alloys, ie …
moved the field of semiconductor epitaxial growth into the region of metastable alloys, ie …
Effective neutron detection using vertical-type BGaN diodes
T Nakano, K Mochizuki, T Arikawa… - Journal of Applied …, 2021 - pubs.aip.org
In this study, vertical-type thick BGaN PIN diodes were successfully fabricated to improve the
neutron capture rate of BGaN diodes by improving the BGaN epitaxial growth technique. In …
neutron capture rate of BGaN diodes by improving the BGaN epitaxial growth technique. In …
The lattice-matched AlInN/GaN high electron mobility transistor with BGaN buffer
L Geng, H Zhao, T Han, X Ren - Solid State Communications, 2021 - Elsevier
This work studies the lattice-matched AlInN/GaN high-electron mobility transistor (HEMT)
with BGaN buffer in drain-current (DC) and radio-frequency (RF) characteristics in theory …
with BGaN buffer in drain-current (DC) and radio-frequency (RF) characteristics in theory …
Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography
Laser assisted atom probe tomography is used to characterize the alloy distribution in
BGaN. The effect of the evaporation conditions applied on the atom probe specimens on the …
BGaN. The effect of the evaporation conditions applied on the atom probe specimens on the …
[HTML][HTML] DC and RF characteristics optimization of AlGaN/GaN/BGaN/GaN/Si HEMT for microwave-power and high temperature application
Abstract AlGaN/GaN/Si high electron mobility transistors (HEMTs) developed by molecular
beam epitaxy (MBE) are studied with several methods for characterization, the most utilized …
beam epitaxy (MBE) are studied with several methods for characterization, the most utilized …
[HTML][HTML] Neutron detection using boron gallium nitride semiconductor material
In this study, we developed a new neutron-detection device using a boron gallium nitride
(BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium …
(BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium …
Optical and structural properties of BGaN layers grown on different substrates
Growth of BGaN epitaxial layers by metalorganic chemical vapor deposition (MOCVD) using
triethylboron (TEB) as a boron source was studied on 6H-SiC substrate and on GaN and AlN …
triethylboron (TEB) as a boron source was studied on 6H-SiC substrate and on GaN and AlN …
Physics based modeling of AlGaN/BGaN quantum well based ultra violet light emitting diodes
This work investigates the multiple quantum well ultraviolet light emitting diode (LED) with
AlGaN/BGaN/AlGaN active stack layers. The thickness and the boron concentration of BGaN …
AlGaN/BGaN/AlGaN active stack layers. The thickness and the boron concentration of BGaN …