Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices
Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …
Core–shell GaN/AlGaN nanowires grown by selective area epitaxy
GaN/AlGaN core–shell nanowires with various Al compositions have been grown on GaN
nanowire array using selective area metal organic chemical vapor deposition technique …
nanowire array using selective area metal organic chemical vapor deposition technique …
UV Emission from GaN Wires with m-Plane Core–Shell GaN/AlGaN Multiple Quantum Wells
The present work reports high-quality nonpolar GaN/Al0. 6Ga0. 4N multiple quantum wells
(MQWs) grown in core–shell geometry by metal–organic vapor-phase epitaxy on the m …
(MQWs) grown in core–shell geometry by metal–organic vapor-phase epitaxy on the m …
Nonpolar AlxGa1−xN/AlyGa1−yN multiple quantum wells on GaN nanowire for UV emission
Nonpolar m-plane AlGaN offers the advantage of polarization-free multiple quantum wells
(MQWs) for ultraviolet (UV) emission and can be achieved on the sidewalls of selective area …
(MQWs) for ultraviolet (UV) emission and can be achieved on the sidewalls of selective area …
Deep UV emission from highly ordered AlGaN/AlN core–shell nanorods
Three-dimensional core–shell nanostructures could resolve key problems existing in
conventional planar deep UV light-emitting diode (LED) technology due to their high …
conventional planar deep UV light-emitting diode (LED) technology due to their high …
Deep ultraviolet light-emitting diodes based on a well-ordered AlGaN nanorod array
The nanorod structure is an alternative scheme to develop high-efficiency deep ultraviolet
light-emitting diodes (DUV LEDs). In this paper, we first report the electrically injected 274 …
light-emitting diodes (DUV LEDs). In this paper, we first report the electrically injected 274 …
M-plane AlGaN digital alloy for microwire UV-B LEDs
The growth of non-polar AlGaN digital alloy (DA) is achieved by metal-organic vapor phase
epitaxy using GaN microwire m-facets as the template. This AlGaN DA consisting of five …
epitaxy using GaN microwire m-facets as the template. This AlGaN DA consisting of five …
Toward Crack-Free Core–Shell GaN/AlGaN Quantum Wells
Strain relaxation of nonpolar GaN/Al0. 6Ga0. 4N multiple quantum wells grown in core–shell
geometry by metal–organic vapor-phase epitaxy on GaN wires is investigated. Cracking …
geometry by metal–organic vapor-phase epitaxy on GaN wires is investigated. Cracking …
[HTML][HTML] Strain and lattice vibration mechanisms in GaN-AlxGa1-xN nanowire structures on Si substrate
In this work we use Raman scattering and X-ray diffraction (XRD) techniques to examine
strain and lattice vibration mechanisms in self-assembled GaN-Al x Ga 1-x N nanowire (NW) …
strain and lattice vibration mechanisms in self-assembled GaN-Al x Ga 1-x N nanowire (NW) …