Advances on sensors based on carbon nanotubes
L Camilli, M Passacantando - Chemosensors, 2018 - mdpi.com
Carbon nanotubes have been attracting considerable interest among material scientists,
physicists, chemists, and engineers for almost 30 years. Owing to their high aspect ratio …
physicists, chemists, and engineers for almost 30 years. Owing to their high aspect ratio …
Quantum dot optoelectronic devices: lasers, photodetectors and solar cells
Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …
Semiconductor quantum dots and related systems: electronic, optical, luminescence and related properties of low dimensional systems
AD Yoffe - Advances in physics, 2001 - Taylor & Francis
This review seeks to extend the scope of both the experimental and theoreticalwork carried
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …
Quantum well infrared photodetectors
H Schneider, HC Liu - 2007 - Springer
This book discusses the physics and applications of quantum well infrared photodetectors
(QWIPs). The presentation is intended for both students as a learning text and …
(QWIPs). The presentation is intended for both students as a learning text and …
Quantum dot infrared photodetectors
HC Liu, M Gao, J McCaffrey, ZR Wasilewski… - Applied Physics …, 2001 - pubs.aip.org
Self-assembled strained semiconductor nanostructures have been grown on GaAs
substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence …
substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence …
Quantum dot opto-electronic devices
P Bhattacharya, S Ghosh… - Annu. Rev. Mater …, 2004 - annualreviews.org
▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …
Nanometer scale spectral imaging of quantum emitters in nanowires and its correlation to their atomically resolved structure
LF Zagonel, S Mazzucco, M Tencé, K March… - Nano …, 2011 - ACS Publications
We report the spectral imaging in the UV to visible range with nanometer scale resolution of
closely packed GaN/AlN quantum disks in individual nanowires using an improved custom …
closely packed GaN/AlN quantum disks in individual nanowires using an improved custom …
Nanostructured materials and architectures for advanced infrared photodetection
Infrared photodetectors are finding widespread applications in telecommunication, motion
detection, chemical sensing, thermal imaging and bio‐medical imaging, etc. The …
detection, chemical sensing, thermal imaging and bio‐medical imaging, etc. The …
Perovskite/poly (3-hexylthiophene)/graphene multiheterojunction phototransistors with ultrahigh gain in broadband wavelength region
Organometal halide perovskite materials have attracted much attention recently for their
excellent optoelectronic properties. Here, we report an ultrasensitive phototransistor based …
excellent optoelectronic properties. Here, we report an ultrasensitive phototransistor based …
Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures
SW Lee, K Hirakawa, Y Shimada - Applied Physics Letters, 1999 - pubs.aip.org
We have designed and fabricated a quantum dot infrared photodetector which utilizes the
lateral transport of photoexcited carriers in the modulation-doped AlGaAs/GaAs two …
lateral transport of photoexcited carriers in the modulation-doped AlGaAs/GaAs two …