Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …

Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic
devices for computing and data storage, but also for emerging technologies such as related …

The nitrides of most of the group IVb-Vb-VIb transition metals (TiN, ZrN, HfN, VN, NbN, TaN,
MoN, WN) constitute the unique category of conductive ceramics. Having substantial …

In this community review report, we discuss applications and techniques for fast machine
learning (ML) in science—the concept of integrating powerful ML methods into the real-time …

In this paper recent work on the application of in situ spectroscopic ellipsometry (SE) during
thin film synthesis by atomic layer deposition (ALD) is reviewed. In particular, the versatility …

This review paper covers a topic of significant importance in micro-and nano-systems
development and manufacturing, specifically the residual stresses in deposited thin-film …

Current trends in semiconductor device manufacturing impose extremely stringent
requirements on nanoscale processing techniques, both in terms of accurately controlling …

The solid state chemistry leading to the synthesis and characterization of metal nitrides with
N: M ratios> 1 is summarized. Studies of these compounds represent an emerging area of …

Control of the nucleation behavior during atomic layer deposition (ALD) of metals is of great
importance for the deposition of metallic thin films and nanoparticles, and for nanopatterning …