Performance analysis of FinFET based inverter, NAND and NOR circuits at 10 nm, 7 nm and 5 nm node technologies
A Lazzaz, K Bousbahi, M Ghamnia - Facta universitatis-series …, 2023 - doiserbia.nb.rs
Advancement in the semiconductor industry has transformed modern society. A
miniaturization of a silicon transistor is continuing following Moore's empirical law. The …
miniaturization of a silicon transistor is continuing following Moore's empirical law. The …
Low-Power Design of Fully Digital BPSK Modulator and Demodulator Utilizing Nanoscale FinFET for Smart Implants
B Jena, K MS, K Priyanka - Current Nanoscience, 2024 - benthamdirect.com
This study aims to create a high-speed, low-power data transmission solution for
implantable medical devices based on cutting-edge FinFET technology. The work examines …
implantable medical devices based on cutting-edge FinFET technology. The work examines …
Parameters optimization to minimize the power dissipation of FiNFET 7 nm
L Abdelaziz, B Khaled… - 2024 16th International …, 2024 - ieeexplore.ieee.org
FinFET device represents an alternative solution to overcome the Short Channel Effect
(SCE). In this paper, a layout based FinFET design approach has been presented at 7 nm …
(SCE). In this paper, a layout based FinFET design approach has been presented at 7 nm …
Steep Sub-threshold Slope Si and InGaAs Dopingless TFET: TCAD and ADS Simulation Based Investigation for Digital/Analog Applications
In this paper, a comparative study is presented for silicon and InGaAs-based DL-TFET for
different circuit designs. Firstly, the silicon DL-TFET result is calibrated and its results are …
different circuit designs. Firstly, the silicon DL-TFET result is calibrated and its results are …
Performance Investigation of Inverted T-shaped Heterojunction FinFET along with Oxide Stacking.
The performance of the newly proposed inverted T-shaped heterojunction FinFET (⊥-
FinFET) with the concept of oxide stacking (L-FinFET_OS) is discussed and compared with …
FinFET) with the concept of oxide stacking (L-FinFET_OS) is discussed and compared with …
Comprehensive Analysis of Gate Oxide Short in Junctionless Fin Field Effect Transistor
Junctionless (JL) FinFET is one of the most promising alternatives to FinFET and planar
MOSFET for future performance enhancements. The complexity of the JL FinFET …
MOSFET for future performance enhancements. The complexity of the JL FinFET …