Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide
semiconductors has grown. They offer high mobility, low off-current, low process …

Amorphous oxide semiconductor transistors have been a mature technology in display
panels for upward of a decade, and have recently been considered as promising back‐end …

Conductive and semiconductive oxides constitute a class of materials of which the electrical
conductivity and optical transparency can be modulated through material design (eg, doping …

Plasma‐enhanced atomic layer deposition (PEALD)‐based bilayer IZO (back channel)/IGZO
top‐gate thin‐film transistors (TFTs) with different IZO and IGZO layer thicknesses are …

The sequential infiltration synthesis (SIS) of group 13 indium and gallium oxides (In2O3 and
Ga2O3) into poly (methyl methacrylate)(PMMA) thin films is demonstrated using …

Stoichiometric crystalline binary metal oxide thin films can be used as channel materials for
transparent thin film transistors. However, the nature of the process used to fabricate these …

One field of organometallic and materials chemistry that has seen great advancements over
the last 20 years is that of atomic layer deposition (ALD), and in particular the development …

Dynamic random-access memory (DRAM) devices are essential volatile memory
components in most digital devices. With the increasing demand for further low-power and …

Recently, indium oxide (In2O3) thin films have emerged as a promising electron transport
layer (ETL) for perovskite solar cells; however, solution-processed In2O3 ETL suffered from …

Indium oxide (In2O3) is an important transparent conducting material widely used in
optoelectronic applications. Herein, we study the deposition of In2O3 by thermal atomic …