This paper reviews the experimental evidence behind a new failure mechanism recently
identified in GaN high-electron mobility transistors subject to electrical stress. Under high …

This paper reviews the physical mechanisms responsible for breakdown current in
AlGaN/GaN high electron mobility transistors (HEMTs). Through a critical comparison …

Trapping is one of the most deleterious effects that limit performance and reliability in GaN
HEMTs. In this paper, we present a methodology to study trapping characteristics in GaN …

During off-state, the influence of surface-trapped electron charges induced by high-field
stress near the gate electrode of AlGaN/GaN power high-electron mobility transistor devices …

In this work, we report a study of the temperature dependent pulsed current voltage and RF
characterization of β-(Al x Ga 1− x) 2 O 3/Ga 2 O 3 hetero-structure FETs (HFETs) before and …

In this paper, the drain current collapse in AlGaN/GaN High Electron Mobility Transistor
(HEMT) with field plate engineering is investigated. A small signal equivalent circuit of …

AlGaN/GaN high electron mobility transistors are gaining commercial acceptance for use in
high power and high frequency applications, but the degradation mechanisms that drive …

We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron
mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the …

In this paper, AlNO nano-films have been deposited on an AlGaN/GaN heterojunction by
alternating growth of AlN and Al2O3 using plasma enhanced atomic layer deposition …

Charge trapping and slow (from 10 s to>; 1000 s) detrapping in AlGaN/GaN high electron
mobility transistors (HEMTs) designed for high breakdown voltages (>; 1500 V) is studied …