Metal-containing organic compounds for memory and data storage applications

H Lian, X Cheng, H Hao, J Han, MT Lau, Z Li… - Chemical Society …, 2022 - pubs.rsc.org
With the upcoming trend of Big Data era, some new types of memory technologies have
emerged as substitutes for the traditional Si-based semiconductor memory devices, which …

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

F Pan, S Gao, C Chen, C Song, F Zeng - Materials Science and …, 2014 - Elsevier
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

Organic resistive memory devices: performance enhancement, integration, and advanced architectures

B Cho, S Song, Y Ji, TW Kim… - Advanced Functional …, 2011 - Wiley Online Library
In recent years, organic resistive memory devices in which active organic materials possess
at least two stable resistance states have been extensively investigated for their promising …

Direct observation of Ag filamentary paths in organic resistive memory devices

B Cho, JM Yun, S Song, Y Ji, DY Kim… - Advanced Functional …, 2011 - Wiley Online Library
We demonstrate bipolar switching of organic resistive memory devices consisting of
Ag/polymer/heavily‐doped p‐type poly Si junctions in an 8× 8 cross‐bar array structure. The …

An organic approach to low energy memory and brain inspired electronics

S Goswami, S Goswami, T Venkatesan - Applied Physics Reviews, 2020 - pubs.aip.org
Brain inspired electronics with organic memristors could offer a functionally promising and
cost-effective platform for flexible, wearable, and personalized computing technologies …

Multilevel resistive memory switching in graphene sandwiched organic polymer heterostructure

G Khurana, P Misra, RS Katiyar - Carbon, 2014 - Elsevier
A novel multilevel resistive switching was observed in trilayer stacked geometry composed
of graphene nano flakes sandwiched between polyvinylidene fluoride layers fabricated by …

Organic nonvolatile memory devices with charge trapping multilayer graphene film

Y Ji, M Choe, B Cho, S Song, J Yoon, HC Ko… - …, 2012 - iopscience.iop.org
We fabricated an array-type organic nonvolatile memory device with multilayer graphene
(MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF …

Carrier transport and memory mechanisms of multilevel resistive memory devices with an intermediate state based on double-stacked organic/inorganic …

Z Ma, C Wu, DU Lee, F Li, TW Kim - Organic Electronics, 2016 - Elsevier
Multilevel resistive memory devices with an intermediate state were fabricated utilizing a
poly (methylmethacrylate)(PMMA) layer sandwiched between double-stacked PMMA layers …

Adjustment of conformation change and charge trapping in ion-doped polymers to achieve ternary memory performance

D He, H Zhuang, H Liu, H Liu, H Li, J Lu - Journal of Materials …, 2013 - pubs.rsc.org
Ion-doped poly (4-vinylpyridine) derivatives (P4VPCz), where in the pendant chains the
electron-withdrawing pyridine moiety and acceptor carbazole moiety are linked by a flexible …

Control of resistive switching voltage by nanoparticle‐decorated wrinkle interface

H Mao, Z Zhou, X Wang, C Ban, Y Ding… - Advanced Electronic …, 2019 - Wiley Online Library
Control of resistive switching voltage in nonvolatile memory devices plays a critical role in
building commercial ultra‐low power data storage technology. Here, an effective strategy to …