Review of recent progress on vertical GaN-based PN diodes
T Pu, U Younis, HC Chiu, K Xu, HC Kuo… - Nanoscale Research …, 2021 - Springer
As a representative wide bandgap semiconductor material, gallium nitride (GaN) has
attracted increasing attention because of its superior material properties (eg, high electron …
attracted increasing attention because of its superior material properties (eg, high electron …
Vertical GaN power devices: Device principles and fabrication technologies—Part I
Recent years have witnessed a tremendous development of vertical gallium nitride (GaN)
power devices, a new class of device technology that could be the key enabler for next …
power devices, a new class of device technology that could be the key enabler for next …
Robust avalanche in 1.7 kV vertical GaN diodes with a single-implant bevel edge termination
This work demonstrates a novel junction termination extension (JTE) with a graded charge
profile for vertical GaN pn diodes. The fabrication of this JTE obviates GaN etch and requires …
profile for vertical GaN pn diodes. The fabrication of this JTE obviates GaN etch and requires …
Vertical GaN power devices: Device principles and fabrication technologies—Part II
Vertical gallium nitride (GaN) power devices are enabling next-generation power electronic
devices and systems with higher energy efficiency, higher power density, faster switching …
devices and systems with higher energy efficiency, higher power density, faster switching …
2.8 kV avalanche in vertical GaN PN diode utilizing field plate on hydrogen passivated P-layer
A novel edge termination method resulting in an avalanche-capable 2.8 kV vertical gallium
nitride (GaN) pn diode is reported. A low transition temperature spin-on-glass (SOG) based …
nitride (GaN) pn diode is reported. A low transition temperature spin-on-glass (SOG) based …
Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm2
X Guo, Y Zhong, Y Zhou, S Su, X Chen… - … on Electron Devices, 2021 - ieeexplore.ieee.org
This work demonstrates a novel Nitrogen-implanted (N-implanted) guard ring (GR)
technology for the 600-V quasi-vertical GaN-on-Si Schottky barrier diode (SBD). The GR …
technology for the 600-V quasi-vertical GaN-on-Si Schottky barrier diode (SBD). The GR …
Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress
This paper reviews materials challenges and recent progress for selective area regrowth
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing
We report enhancement-mode p-channel heterojunction field-effect transistors (HFETs)
without gate recess on a standard p-GaN/AlGaN/GaN high electron mobility transistor …
without gate recess on a standard p-GaN/AlGaN/GaN high electron mobility transistor …
Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN pn junctions for efficient power devices
We report correlated nanoscale mapping of the structure, composition, and properties of
regrown GaN pn junctions to identify how etching and non-planar regrowth processes limit …
regrown GaN pn junctions to identify how etching and non-planar regrowth processes limit …
[HTML][HTML] GaN-on-GaN pin diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment
Traditional mesa terminations require precise angle design to reduce the electric field at the
edge and surface treatment to reduce etch damage. Otherwise, the device usually suffers a …
edge and surface treatment to reduce etch damage. Otherwise, the device usually suffers a …