Since the 1960s, a new class of Si-based advanced ceramics called polymer-derived
ceramics (PDCs) has been widely reported because of their unique capabilities to produce …

Silicon Carbide as an inorganic material possesses properties like high thermochemical
stability, high hardness and fracture toughness, low thermal expansion coefficient etc. It is …

The oxidation kinetics of CVDSiC were monitored by thermogravimetric analysis (TGA) in a
50% H2O/50% O2 gas mixture flowing at 1.4 cm/s for temperatures between 1200” and …

Chemically vapor deposited silicon carbide (CVD SiC) was oxidized at temperatures of
1000°‐1400° C in H2O/O2 gas mixtures with compositions of 10‐90 vol% water vapor at a …

At high temperatures, SiC and Si3N4 react with water vapor to form a SiO2 scale. SiO2
scales also react with water vapor to form a volatile Si (OH) 4 species. These simultaneous …

Current state of the art (SOA) environmental barrier coating (EBCs) systems necessary for
SiC/SiC ceramic matrix composites (CMCs) rely upon a metallic silicon bond coat. While this …

Silicon carbide (SiC) as both the most important non-oxide ceramic and promising
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …

There is lingering disagreement over the relative oxidation kinetics of SiC and Si3N 4 in the
regime of passive oxidation. Various oxidation enthalpies have been reported for these …

The oxidation of BN composite interphases was examined with a series of model materials.
Oxidation was examined in both low‐water‐vapor (∼ 20 ppm H2O/O2) environments at …

抄録 Oxidation behavior of silicon-based ceramics such as SiC and Si 3 N 4 at high
temperatures is important for their practical applications to structural or electronic materials …