Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi‐Functional Optoelectronic Sensors
The unique electrical and optical properties of transition metal dichalcogenides (TMDs)
make them attractive nanomaterials for optoelectronic applications, especially optical …
make them attractive nanomaterials for optoelectronic applications, especially optical …
Excellent energy storage and hardness performance of Sr0. 7Bi0. 2TiO3 ceramics fabricated by solution combustion-synthesized nanopowders
C Zuo, S Yang, Z Cao, H Yu, X Wei - Chemical Engineering Journal, 2022 - Elsevier
Abstract Relaxor ferroelectric Sr 0.7 Bi 0.2 TiO 3 ceramics were prepared by two types of
powders synthesized by solid-state reaction (SSR) and solution combustion synthesis …
powders synthesized by solid-state reaction (SSR) and solution combustion synthesis …
[HTML][HTML] Ferroelectrics Based on HfO2 Film
CM Song, HJ Kwon - Electronics, 2021 - mdpi.com
The discovery of ferroelectricity in HfO2 thin film, which is compatible with the CMOS
process, has revived interest in ferroelectric memory devices. HfO2 has been found to …
process, has revived interest in ferroelectric memory devices. HfO2 has been found to …
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors
The crucial role of nanocrystalline morphology in stabilizing the ferroelectric orthorhombic
(o)-phase in doped-hafnia films is achieved via chemical solution deposition (CSD) by …
(o)-phase in doped-hafnia films is achieved via chemical solution deposition (CSD) by …
Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor
Negative capacitance gives rise to subthreshold swing (SS) below the fundamental limit by
efficient modulation of surface potential in transistors. While negative‐capacitance transition …
efficient modulation of surface potential in transistors. While negative‐capacitance transition …
WSe2 Negative Capacitance Field-Effect Transistor for Biosensing Applications
X Wu, S Gao, L Xiao, J Wang - ACS Applied Materials & Interfaces, 2024 - ACS Publications
Field-effect transistor (FET) biosensors based on two-dimensional (2D) materials are highly
sought after for their high sensitivity, label-free detection, fast response, and ease of on-chip …
sought after for their high sensitivity, label-free detection, fast response, and ease of on-chip …
Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware
In a data‐driven economy, virtually all industries benefit from advances in information
technology—powerful computing systems are critically important for rapid technological …
technology—powerful computing systems are critically important for rapid technological …
Negative capacitance field effect transistors based on van der Waals 2D materials
RS Chen, Y Lu - Small, 2024 - Wiley Online Library
Steep subthreshold swing (SS) is a decisive index for low energy consumption devices.
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …
Transparent and Flexible Copper Iodide Resistive Memories Processed with a Dissolution-Recrystallization Solution Technique
This study explores a class of resistive memory candidates─ simple binary halides─ and
demonstrates their efficacy in switching between high-and low-resistive states. Herein …
demonstrates their efficacy in switching between high-and low-resistive states. Herein …
Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrOx/HfZrO Gate Insulator by 2 Step Sequential Ar/O2 Treatment
We report the improvement of ferroelectric (FE) amorphous InGaZnO 4 (a-IGZO) thin film
transistors (TFT) by Ar/O 2 plasma treatment and subsequent thermal annealing. The a-IGZO …
transistors (TFT) by Ar/O 2 plasma treatment and subsequent thermal annealing. The a-IGZO …