[HTML][HTML] Neuromorphic synaptic applications of HfAlOx-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarization
HfO 2-based ferroelectric tunnel junctions (FTJs) are promising nonvolatile memory types for
neural network applications because of their speed, low power, and excellent …
neural network applications because of their speed, low power, and excellent …
Effect of interfacial SiO 2 layer thickness on the memory performances in the HfAlO x-based ferroelectric tunnel junction for a neuromorphic system
In recent years, research on ferroelectric materials based on hafnium oxide has increased
because of promising advantages such as fast operating speeds and CMOS process …
because of promising advantages such as fast operating speeds and CMOS process …
Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs
This study investigates the 1/f noise characteristics of Schottky barrier (SB) ferroelectric field-
effect transistors (FeFETs) and their response to program/erase (P/E) cycling-induced …
effect transistors (FeFETs) and their response to program/erase (P/E) cycling-induced …
Comparative Analysis of n- and p-type Ferroelectric Tunnel Junctions Through Understanding of non-FE Resistance Switching
We re-evaluate the performance of the-type ferroelectric tunnel junction (FTJp) by
introducing a perspective that includes non-ferroelectric (FE) resistive switching (RS) …
introducing a perspective that includes non-ferroelectric (FE) resistive switching (RS) …
Analysis of electrochemical impedance data: use of deep neural networks
Technology advancements in energy storage, photocatalysis, and sensors have generated
enormous impedimetric data. Electrochemical impedance spectroscopy (EIS) results play an …
enormous impedimetric data. Electrochemical impedance spectroscopy (EIS) results play an …
Stochasticity in ferroelectric memory devices with different bottom electrode crystallinity
This study comprehensively analyzes of the influence of bottom electrode crystallinity on the
stochastic noise in ferroelectric tunnel junctions (FTJs). We perform a comparative analysis …
stochastic noise in ferroelectric tunnel junctions (FTJs). We perform a comparative analysis …
[HTML][HTML] Noise-assisted transport mechanism analysis and synaptic characteristics in ZrOX/HfAlOX-based memristor for neuromorphic systems
In this work, we compare the resistive switching characteristics between Ti/ZrO X/TiN and
Ti/ZrO X/HfAlO X/TiN. The bilayer structure of the ZrO X-based device enables power …
Ti/ZrO X/HfAlO X/TiN. The bilayer structure of the ZrO X-based device enables power …
Reservoir Computing System with Diverse Input Patterns in HfAlO-Based Ferroelectric Memristor
Ferroelectric memristors, particularly those based on hafnia, are gaining attention as
potential candidates for neuromorphic computing. These devices offer advantages over …
potential candidates for neuromorphic computing. These devices offer advantages over …
An electric-field-driven ferroelectric nanodomain structure and its multilevel data storage application
P Hou, Z Lian, C Chen - Physical Chemistry Chemical Physics, 2023 - pubs.rsc.org
Solid-state multilevel data storage devices based on ferroelectric materials possess
significant potential for use as artificial synapses in building biomimetic neural networks with …
significant potential for use as artificial synapses in building biomimetic neural networks with …
Stochastic behavior of random telegraph noise in ferroelectric devices: Impact of downscaling and mitigation strategies for neuromorphic applications
This study investigates the stochastic behavior of random telegraph noise (RTN) in
ferroelectric tunnel junctions (FTJs) considering the downscaling effect and its implications …
ferroelectric tunnel junctions (FTJs) considering the downscaling effect and its implications …