Remaining useful lifetime prediction and extension of Si power devices have been studied
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …

Accelerated lifetime tests (ALTs) play a critical role in long-term reliability studies of SiC
MOSFETs, including lifetime estimation, failure analysis, and condition monitoring. This …

Gate-oxide degradation has been one of the major reliability challenges of SiC MOSFETs
and should be monitored carefully to avoid unexpected power converter failures. Various …

This paper proposes a system-level comparison between diamond and silicon carbide (SiC)
power devices. It highlights the benefits of diamond semiconductors for power electronics …

Parallel-connected power device is an extensively applied solution in the industry to
increase the current rating of the converter system. However, due to the undesired printed …

AC power cycling tests allow the most realistic reliability assessment by applying close to
real stress to the device or module under test to meet functional safety standards, which is …

Power cycling test (PCT) is an effective method to evaluate the SiC mosfet s' long-term
reliability, including lifetime and degradation mechanisms. Some of the aging precursors of …

While silicon carbide power mosfet s have significantly superior figures-of-merit in
comparison to conventional silicon devices, they have seen relatively limited adoption in …

This article evaluates silicon carbide (SiC) mosfet's reliability and ruggedness
comprehensively between two widely employed device package types: common source and …

Bond wire aging is a universal failure form of silicon carbide metal-oxide-semiconductor field-
effect transistor (SiC MOSFET) module. Real-time condition monitoring of bond wire is an …