The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

For the last 75 years several studies have been reporting on the physical properties of
niobium oxides, but there is still many contradictory, inconsistent and insufficient information …

With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …

Orbital occupancy control in correlated oxides allows the realization of new electronic
phases and collective state switching under external stimuli. The resultant structural and …

Volatile threshold switching (TS) and non‐volatile memory switching (MS) are two typical
resistive switching (RS) phenomena in oxides, which could form the basis for memory …

We built and measured the dynamical current versus time behavior of nanoscale niobium
oxide crosspoint devices which exhibited threshold switching (current-controlled negative …

In our brain, information is exchanged among neurons in the form of spikes where both the
space (which neuron fires) and time (when the neuron fires) contain relevant information …

In this review the different concepts of nanoscale resistive switching memory devices are
described and classified according to their I–V behaviour and the underlying physical …

A number of important commercial applications would benefit from the introduction of easily
manufactured devices that exhibit current-controlled, or “S-type,” negative differential …

This work elucidates some aspects of the nonlinear dynamics of a thermally-activated locally-
active memristor based on a micro-structure consisting of a bi-layer of Nb2O5 and Nb2Ox …