Laser diodes emitting at room temperature in continuous wave regime (CW) in the mid-
infrared (2–5 μm spectral domain) are needed for applications such as high sensitivity gas …

An overview of the three competing mid-infrared semiconductor laser approaches, being
diode, quantum cascade and interband cascade laser designs, is given. Limiting factors as …

We describe how growth at low temperatures can enable increased active layer strain in
GaSb-based type-I quantum-well diode lasers, with emphasis on extending the emission …

The growth conditions and the operation of a diode-pumped AlGaAsSb/GaInAsSb type-I
quantum-well vertical cavity surface emitting laser emitting near 2.3 μm in an external cavity …

This chapter will review the dramatic recent technical progress of midwave infrared (mid-IR)
semiconductor lasers emitting at wavelengths beyond 2µm, specifically those employing the …

Abstract High performance mid-infrared (2–5 μm) laser diodes are needed for applications
such as high resolution and high sensitivity chemical gas analysis and atmospheric pollution …

This paper describes the structural evolution and characterization of heteroepitaxial GaSb
thin films on Si (111) substrates. The growth process used a combination of atomic sources …

GaSb based quantum wells (QWs) show promising optical properties in near-infrared
spectral range. In this paper, we present photoluminescence (PL) spectroscopies of In x Ga …

The small effective mass of electrons in InSb results in a high electron mobility if the
densities of crystalline defects and other scattering sources are sufficiently reduced. The …

Photoreflectance and phototransmittance have been used for the investigation of optical
transitions in an In 0.22 Ga 0.78 Sb/GaSb single quantum well grown by molecular beam …