Observation of Josephson harmonics in tunnel junctions

D Willsch, D Rieger, P Winkel, M Willsch, C Dickel… - Nature Physics, 2024 - nature.com
Approaches to developing large-scale superconducting quantum processors must cope with
the numerous microscopic degrees of freedom that are ubiquitous in solid-state devices …

Resistive switching of self-assembly stacked h-BN polycrystal film

T Sun, J Tu, Z Zhou, R Sun, X Zhang, H Li, Z Xu… - Cell Reports Physical …, 2022 - cell.com
Two-dimensional materials resistive random-access memories (RRAMs) are known to
exhibit excellent nonvolatile resistive switching (NVRS) performance. However, most two …

Atomic and Electronic Structure of the Al2O3/Al Interface during Oxide Propagation Probed by Ab Initio Grand Canonical Monte Carlo

V Somjit, B Yildiz - ACS Applied Materials & Interfaces, 2022 - ACS Publications
Identifying the structure of the Al2O3/Al interface is important for advancing its performance
in a wide range of applications, including microelectronics, corrosion barriers, and …

Blurred interface induced control of electrical transport properties in Josephson junctions

J Qiu, H Sun, C Han, X Ding, B Zhao, S Wang… - Scientific Reports, 2024 - nature.com
The interfacial microstructures of Josephson junctions are vital for understanding the
microscopic mechanism to improve the performance of superconducting qubits further …

O-terminated interface for thickness-insensitive transport properties of aluminum oxide Josephson junctions

Z Shan, X Gou, H Sun, S Wang, J Shang, L Han - Scientific Reports, 2022 - nature.com
Alumina Josephson junction has demonstrated a tremendous potential to realize
superconducting qubits. Further progress towards scalable superconducting qubits urgently …

Structural details of junctions and their role in the formation of electron tunnel barriers

M Koberidze, MJ Puska, RM Nieminen - Physical Review B, 2018 - APS
We present a computational study of the adhesive and structural properties of the Al/Al 2 O 3
interfaces as building blocks of the metal-insulator-metal (MIM) tunnel devices, where …

Manipulation of electrical performance in Al-based Josephson junctions via oxygen vacancies in barrier

J Qiu, S Wang, H Sun, C Han, Z Shan - Journal of Materials Chemistry …, 2024 - pubs.rsc.org
Defects in the Al-based Josephson junctions, particularly oxygen vacancy (OV) defects in
the barrier, are key determinants for the performance of superconducting qubits, directly …

Dioxygen molecule adsorption and oxygen atom diffusion on clean and defective aluminum (111) surface using first principles calculations

M Guiltat, M Brut, S Vizzini, A Hémeryck - Surface Science, 2017 - Elsevier
First principles calculations are conducted to investigate kinetic behavior of oxygen species
at the surface of clean and defective Al (111) substrate. Oxygen island, aluminum vacancy …

Modeling of electron tunneling through a tilted potential barrier

N Tuomisto, A Zugarramurdi, MJ Puska - Journal of Applied Physics, 2017 - pubs.aip.org
Tunnel junctions are interesting for both studying fundamental physical phenomena and
providing new technological applications. Modeling of the tunneling current is important for …

[HTML][HTML] Metal-insulator-metal diodes based on alkyltrichlorosilane self-assembled monolayers

J Jin, L Wang, Z Zheng, J Zhang, X Hu, JR Lu, D Etor… - AIP Advances, 2019 - pubs.aip.org
This paper reports on the experimental investigation of metal-insulator-metal (MIM) diodes
based on alkyltrichlorosilane self-assembled monolayers (SAMs) with different alkyl chain …