Peculiarities of resistive switching in thin films of glassy SeTeSnGe system

HE Atyia, SS Fouad, SK Pal, N Mehta - Materials Science and Engineering …, 2022 - Elsevier
In this study, intense interest has been undertaken to understand and elucidate the type of
electrical switching in amorphous thin films of the SeTeSnGe. The role of both composition …

Crystallization kinetics and investigation of electrical properties of indium-incorporated Se80Te15-xSb5Inx (x = 0, 5, 10) quaternary chalcogenide glasses

M Shoab, Z Aslam, J Ali, M Zulfequar - Journal of Materials Science …, 2023 - Springer
This work reports the structural, thermal, and electrical properties of Se80Te15-xSb5Inx (x=
0, 5, 10) chalcogenide glasses. Scanning electron microscope (SEM) and X-ray diffraction …

Electrical switching and other properties of chalcogenide glasses

S Asokan, KP Lakshmi - Journal of the Indian Institute of Science, 2011 - journal.iisc.ac.in
Electrical switching which has applications in areas such as information storage, power
control, etc is a scientifically interesting and technologically important phenomenon …

Studies on electrical switching behavior and optical band gap of amorphous Ge–Te–Sn thin films

C Das, MG Mahesha, G Mohan Rao, S Asokan - Applied Physics A, 2012 - Springer
Abstract Amorphous thin film Ge 15 Te 85− x Sn x (1≤ x≤ 5) and Ge 17 Te 83− x Sn x (1≤
x≤ 4) switching devices have been deposited in sandwich geometry using a flash …

Thermally reversing window in Ge15Te85− xInx glasses: Nanoindentation and micro-Raman studies

GS Varma, M Kiran, DVS Muthu, U Ramamurty… - Journal of Non …, 2012 - Elsevier
Nanoindentation studies on Ge15Te85− xInx glasses indicate that the hardness and elastic
modulus of these glasses increase with indium concentration. While a pronounced plateau …

Electrical switching, SET-RESET, and Raman scattering studies on Ge15Te80− xIn5Agx glasses

G Sreevidya Varma, DVS Muthu, AK Sood… - Journal of Applied …, 2014 - pubs.aip.org
Bulk Ge 15 Te 85− x In 5 Ag x glasses are shown to exhibit electrical switching with
switching/threshold voltages in the range of 70–120 V for a sample thickness of 0.3 mm …

Electrical switching and optical studies on amorphous GexSe35− xTe65 thin films

C Das, MG Mahesha, GM Rao, S Asokan - Thin Solid Films, 2012 - Elsevier
The electrical switching behavior of amorphous GexSe35− xTe65 thin film samples has
been studied in sandwich geometry of electrodes. It is found that these samples exhibit …

Kinetics based evidence for intermediate phase in Ge15Te85− xInx chalcogenide glasses

GS Varma, A Chaturvedi, U Ramamurty… - Journal of Non-Crystalline …, 2017 - Elsevier
This paper presents the thermal studies carried out using Differential Scanning Calorimetry
on Ge 15 Te 85− x In x glasses (1≤ x≤ 11) to find glass transition temperature, T g and …

Raman signatures of intermediate phase in quaternary Ge15Te80− xIn5Agx glasses

GS Varma, DVS Muthu, AK Sood, S Asokan - Journal of non-crystalline …, 2014 - Elsevier
Micro-Raman studies are conducted on as-quenched and annealed Ge 15 Te 80− x In 5 Ag
x glasses to probe the structural network and its evolution with composition. These studies …

Signatures of an extended rigidity percolation in the photo-degradation behavior and the composition dependence of photo-response of Ge–Te–in glasses

N Manikandan, S Asokan - Journal of non-crystalline solids, 2008 - Elsevier
Time dependent photocurrent measurements have been undertaken on bulk Ge15Te85−
xInx (1⩽ x⩽ 11) series of glasses. It is found that samples with x< 3 do not exhibit any photo …