A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time

A Sachdeva, D Kumar, E Abbasian - AEU-International Journal of …, 2023 - Elsevier
Carbon nanotube field effect transistor (CNTFET) is swiftly becoming an alternative to
conventional CMOS transistors due to superior transport properties, improved current …

Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications

F Zahoor, M Hanif, UI Bature, S Bodapati… - Physica …, 2023 - iopscience.iop.org
The research interest in the field of carbon nanotube field effect transistors (CNTFETs) in the
post Moore era has witnessed a rapid growth primarily due to the fact that the conventional …

A high-performance and energy-efficient ternary multiplier using CNTFETs

E Abbasian, S Sofimowloodi - Arabian Journal for Science and …, 2023 - Springer
Internet-of-things-based embedded systems depend on batteries as an energy resource,
and thus, require energy-efficient circuits for prolonged operation. To achieve energy …

An ultra‐low power and energy‐efficient ternary Half‐Adder based on unary operators and two ternary 3: 1 multiplexers in 32‐nm GNRFET technology

E Abbasian, M Orouji… - … Journal of Circuit …, 2023 - Wiley Online Library
Summary Internet‐of‐Things (IoTs)‐based embedded systems require energy‐efficient
designs for long‐term operation. To achieve energy‐efficient designs, multiple‐valued logic …

Highly-efficient cntfet-based unbalanced ternary logic gates

E Abbasian, S Sofimowloodi… - ECS Journal of Solid …, 2023 - iopscience.iop.org
A large number of interconnections required to implement a binary logic-based circuit leads
to an increase in power/energy consumption and area overhead. Utilizing multiple-valued …

A high-speed low-energy one-trit ternary multiplier circuit design in CNTFET technology

E Abbasian, M Nayeri - ECS Journal of Solid State Science and …, 2023 - iopscience.iop.org
Contemporary system-on-chip-based applications are battery-powered. To increase the
operation time, they need various low-power/energy circuits. Carbon nanotube field-effect …

A low-power SRAM design with enhanced stability and ION/IOFF ratio in FinFET technology for wearable device applications

E Abbasian, S Birla, A Sachdeva… - International Journal of …, 2024 - Taylor & Francis
Wearable device applications such as smartwatches, fitness trackers, and health monitors
rely on batteries for power and require static random-access memory (SRAM) with low …

Highly reliable bio-inspired spintronic/CNTFET multi-bit per cell nonvolatile memory

A Amirany, K Jafari, MH Moaiyeri - AEU-International Journal of Electronics …, 2023 - Elsevier
This paper proposes a bio-inspired, low-cost, and highly reliable non-volatile memory
design with multi-bit storage capability in one cell to answer the existing memory challenges …

A stable low leakage power SRAM with built-in read/write-assist scheme using GNRFETs for IoT applications

E Abbasian, T Mirzaei… - ECS Journal of Solid State …, 2022 - iopscience.iop.org
Abstract Design of circuits using graphene nanoribbon field-effect transistors (GNRFETs), as
promising next-generation devices, can improve total performance of a chip due to offering …

A novel CNTFET based Schmitt-Trigger read decoupled 12T SRAM cell with high speed, low power, and high Ion/Ioff ratio

L Soni, N Pandey - AEU-International Journal of Electronics and …, 2023 - Elsevier
Many researchers are working to develop a static random access memory (SRAM) cell that
uses low power, has good stability, better I on/I off ratio and speed. This paper presents a …