Monolithic 3D integration as a pathway to energy-efficient computing and beyond: From materials and devices to architectures and chips
As emerging technologies like artificial intelligence (AI) and big data continue to evolve, the
demand for high-performance computing (HPC) has been increasing, driving the …
demand for high-performance computing (HPC) has been increasing, driving the …
Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors
Tungsten oxide (WO3) doped indium oxide (IWO) field-effect transistors (FET), synthesized
using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line …
using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line …
Modeling and Understanding Threshold Voltage and Subthreshold Swing in Ultrathin Channel Oxide Semiconductor Transistors
We present a physics-based model for ultrathin channel oxide semiconductor field-effect
transistors (OSFETs) which successfully incorporates and explains several important OSFET …
transistors (OSFETs) which successfully incorporates and explains several important OSFET …
Design Guidelines for Oxide Semiconductor Gain Cell Memory on a Logic Platform
We offer design guidelines with a top–down and bottom–up design approach for oxide
semiconductor (OS) transistors, optimized for gain cell memory on a logic platform. With high …
semiconductor (OS) transistors, optimized for gain cell memory on a logic platform. With high …
BEOL Compatible Ultra-Thin ITO Transistor with Performance Recoverable Capability by in situ Electrothermal Annealing
Gate bias instability, a well-known issue in oxide semiconductors, is linked to their inherent
sensitivity to oxygen species. In this work, we systematically investigated the reliability of …
sensitivity to oxygen species. In this work, we systematically investigated the reliability of …
High-Stability IWO Thin-Film Transistors under Microwave Annealing for Low Thermal Budget Application
YX Chen, YL Wang, FJ Li, HH Li… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
In this work, we investigated the effects of microwave thermal annealing (MWA) on the
electrical performance and stability of Indium-Tungsten-Oxide (IWO) thin-film transistors …
electrical performance and stability of Indium-Tungsten-Oxide (IWO) thin-film transistors …
Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors
YX Chen, YL Wang, FJ Li, SJ Chang… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
In this work, we systematically investigated the effect of oxygen treatment on the material
and electrical properties of Indium-Tungsten-Oxide thin film transistors (IWO-TFTs) by O 2 …
and electrical properties of Indium-Tungsten-Oxide thin film transistors (IWO-TFTs) by O 2 …