The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique
The ZnO layer onto n-Si has been formed by atomic layer deposition technique. A final film
thickness of 10 nm has been obtained by the resulting ZnO film growth rate of about 1.45 Å …
thickness of 10 nm has been obtained by the resulting ZnO film growth rate of about 1.45 Å …
The effect of Fe dopant on structural, optical properties of TiO2 thin films and electrical performance of TiO2 based photodiode
S Ruzgar, SA Pehlivanoglu - Superlattices and Microstructures, 2020 - Elsevier
Herein, TiO 2 heterojunctions were fabricated by sol gel spin coating technique as a function
of Fe doping. The effect of Fe doping on the optical, structural, morphological properties of …
of Fe doping. The effect of Fe doping on the optical, structural, morphological properties of …
Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures
A Karabulut, H Efeoglu, A Turut - Journal of Semiconductors, 2017 - iopscience.iop.org
Abstract The Au/Ti/n-GaAs structures with and without Al 2 O 3 interfacial layer have been
fabricated. The Al 2 O 3 interfacial layer has been formed on the GaAs substrate by atomic …
fabricated. The Al 2 O 3 interfacial layer has been formed on the GaAs substrate by atomic …
The effect of measurements and layer coating homogeneity of AB on the Al/AB/p-Si devices
Aniline blue (AB) thin film layers were deposited on p-Si and glass substrates by spin
coating technique to investigate measurements and layer coating homogeneity effect on the …
coating technique to investigate measurements and layer coating homogeneity effect on the …
The Au/Cu2WSe4/p-Si photodiode: electrical and morphological characterization
Cu 2 WSe 4 nanosheets were synthesized by the hot-injection method and put as interfacial
layers between Au metal and p-Si by spin coating technique to investigate their …
layers between Au metal and p-Si by spin coating technique to investigate their …
Leakage current reduction in n-GaN/p-Si (100) heterojunction solar cells
We report on the growth of n-GaN/p-Si heterojunction solar cells via thermal chemical vapor
deposition on Si (100) substrates at different growth temperatures (900, 950, and 1000 C) …
deposition on Si (100) substrates at different growth temperatures (900, 950, and 1000 C) …
Modification of barrier height inhomogeneity in the presence of titanium dioxide nanoparticles on Carmoisine dye-based Schottky device
This study investigates the effect of Titanium Dioxide (TiO 2) nanoparticles on the barrier
height inhomogeneity of Carmoisine dye-based Schottky device. The 1: 1 ratio of dye and …
height inhomogeneity of Carmoisine dye-based Schottky device. The 1: 1 ratio of dye and …
Growth of high-quality GaN nanowires on p-Si (1 1 1) and their performance in solid state heterojunction solar cells
We report on the optimized growth of catalyst-free GaN nanowires (NWs)/p-Si by the vapor–
solid (VS) method using chemical vapor deposition (CVD). The effect of NH 3 gas flow rate …
solid (VS) method using chemical vapor deposition (CVD). The effect of NH 3 gas flow rate …
The performance of chitosan layer in Au/n-Si sandwich structures as a barrier modifier
This study focused on the structural, optical and electrical features of chitosan organic layer
obtained by spin coating technique both on glass and n-Si substrates. XRD results indicated …
obtained by spin coating technique both on glass and n-Si substrates. XRD results indicated …
Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on …
O Özakın, M Sağlam, B Güzeldir - Journal of Materials Science: Materials …, 2022 - Springer
It is well known that in metal–semiconductor rectifier junctions with an interface layer, the
drop potential across the interface layer modifies the barrier height by changing the electric …
drop potential across the interface layer modifies the barrier height by changing the electric …