Purely antiferromagnetic magnetoelectric random access memory
Magnetic random access memory schemes employing magnetoelectric coupling to write
binary information promise outstanding energy efficiency. We propose and demonstrate a …
binary information promise outstanding energy efficiency. We propose and demonstrate a …
Nanoscale mechanics of antiferromagnetic domain walls
Antiferromagnets can encode information in their ordered magnetic structure, providing the
basis for future spintronic devices,–. The control and understanding of antiferromagnetic …
basis for future spintronic devices,–. The control and understanding of antiferromagnetic …
Roadmap on magnetoelectric materials and devices
X Liang, A Matyushov, P Hayes, V Schell… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
The possibility of tuning the magnetic properties of materials with voltage (converse
magnetoelectricity) or generating electric voltage with magnetic fields (direct …
magnetoelectricity) or generating electric voltage with magnetic fields (direct …
Multiferroic and magnetoelectric nanocomposites for data processing
W Kleemann - Journal of Physics D: Applied Physics, 2017 - iopscience.iop.org
Recent progress in preparing and understanding composite magnetoelectrics is highlighted.
Apart from optimized standard solutions novel methods of switching magnetism with electric …
Apart from optimized standard solutions novel methods of switching magnetism with electric …
Voltage controlled Néel vector rotation in zero magnetic field
Multi-functional thin films of boron (B) doped Cr2O3 exhibit voltage-controlled and
nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H …
nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H …
Magnetoelectrics and multiferroics: Materials and opportunities for energy-efficient spin-based memory and logic
With the explosion of Internet traffic, the rise of large data centers, and smart technologies on
the horizon, forecasts of the global energy consumption from information, and …
the horizon, forecasts of the global energy consumption from information, and …
[HTML][HTML] Increasing the Néel temperature of magnetoelectric chromia for voltage-controlled spintronics
M Street, W Echtenkamp, T Komesu, S Cao… - Applied Physics …, 2014 - pubs.aip.org
Boron doped chromia (Cr 2 O 3) thin films with substitutional doping levels between zero
and 3% are grown using pulsed laser deposition in borane background gases …
and 3% are grown using pulsed laser deposition in borane background gases …
Conducting mechanism in the epitaxial -type transparent conducting oxide
Epitaxial p-type transparent conducting oxide (TCO) C r 2 O 3: Mg was grown by electron-
beam evaporation in a molecular beam epitaxy system on c-plane sapphire. The influence …
beam evaporation in a molecular beam epitaxy system on c-plane sapphire. The influence …
Hidden orders and (anti-)magnetoelectric effects in and
We present ab initio calculations of hidden magnetoelectric multipolar order in Cr 2 O 3 and
its iron-based analog, α-Fe 2 O 3. First, we discuss the connection between the order of such …
its iron-based analog, α-Fe 2 O 3. First, we discuss the connection between the order of such …
[HTML][HTML] Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory
Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications
for magnetoelectric memory applications are discussed. Cr 2 O 3 is used in the estimates of …
for magnetoelectric memory applications are discussed. Cr 2 O 3 is used in the estimates of …