Status and prospects of cubic silicon carbide power electronics device technology
Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power
electronics due to their superior electrical energy efficiencies and improved power densities …
electronics due to their superior electrical energy efficiencies and improved power densities …
Radiation effects in new materials for nano-devices
Exposure to radiation poses significant challenges for electronic devices, including
parametric degradation, loss of data, or catastrophic failure. The challenges and solutions …
parametric degradation, loss of data, or catastrophic failure. The challenges and solutions …
Atomic state and characterization of nitrogen at the SiC/SiO2 interface
Y Xu, X Zhu, HD Lee, C Xu, SM Shubeita… - Journal of Applied …, 2014 - pubs.aip.org
We report on the concentration, chemical bonding, and etching behavior of N at the SiC
(0001)/SiO 2 interface using photoemission, ion scattering, and computational modeling. For …
(0001)/SiO 2 interface using photoemission, ion scattering, and computational modeling. For …
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing
The interfacial electrical properties of deposited oxide (SiO 2) onto cubic silicon carbide (3C-
SiC) were investigated after different post-oxide deposition annealing (PDA) by means of …
SiC) were investigated after different post-oxide deposition annealing (PDA) by means of …
Effects of bias on the irradiation and annealing responses of 4H-SiC MOS devices
CX Zhang, EX Zhang, DM Fleetwood… - … on Nuclear Science, 2011 - ieeexplore.ieee.org
The irradiation and annealing responses of 4H-SiC MOS devices with nitrided oxides are
investigated at varying biases. Radiation-induced hole trapping dominates the radiation …
investigated at varying biases. Radiation-induced hole trapping dominates the radiation …
Temperature Dependence and Postirradiation Annealing Response of the Noise of 4H-SiC MOSFETs
The temperature dependence of the low-frequency noise of 4H-silicon carbide (SiC)
MOSFETs with nitrided oxides is reported over the temperature range 85-510 K. The 1/f …
MOSFETs with nitrided oxides is reported over the temperature range 85-510 K. The 1/f …
Bias-temperature instabilities in 4H-SiC metal–oxide–semiconductor capacitors
EX Zhang, CX Zhang, DM Fleetwood… - … on Device and …, 2012 - ieeexplore.ieee.org
Bias-temperature instabilities (BTIs) are investigated for n-and p-substrate 4H-SiC metal–
oxide–semiconductor (MOS) capacitors. The midgap voltage (V_\rmmg) shifts positively …
oxide–semiconductor (MOS) capacitors. The midgap voltage (V_\rmmg) shifts positively …
A new proposal for Si tandem solar cell: significant efficiency enhancement in 3C–SiC/Si
In order to considerable enhancement of the efficiency of silicon solar cells, in this paper, for
the first time, we present a new proposal for silicon based tandem solar cells. For …
the first time, we present a new proposal for silicon based tandem solar cells. For …
Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultra-High Doses
Total-ionizing dose (TID) and displacement damage (DD) are investigated in SiC power
MOSFETs at ultrahigh doses with 10-keV X-ray and 3-MeV protons. Significant parametric …
MOSFETs at ultrahigh doses with 10-keV X-ray and 3-MeV protons. Significant parametric …
A Deep Insight Into the Ionizing Radiation Effects and Mechanisms on the Dynamic Characteristics of SiC MOSFETs
H Tan, L Zhang, R Tan, P Dong - IEEE Transactions on Electron …, 2023 - ieeexplore.ieee.org
The robustness of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor
(MOSFET) under harsh environments is a crucial factor to ensure power conversion system …
(MOSFET) under harsh environments is a crucial factor to ensure power conversion system …