Emerging materials for microelectromechanical systems at elevated temperatures

JA Krogstad, C Keimel, KJ Hemker - Journal of Materials Research, 2014 - cambridge.org
Extension of microelectromechanical systems (MEMS) into more extreme operating
conditions will require a wider range of material properties than are currently available in …

Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

Z Shi, J Yuan, S Zhang, Y Liu, Y Wang - Optical Materials, 2017 - Elsevier
We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning
InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for …

Suspended p–n junction InGaN/GaN multiple-quantum-well device with selectable functionality

X Li, G Zhu, X Gao, D Bai, X Huang, X Cao… - IEEE Photonics …, 2015 - ieeexplore.ieee.org
We demonstrate optoelectronic devices implemented on suspended pn junction InGaN/GaN
multiple quantum wells (MQWs) for the further monolithic integration of an optical source, a …

Light induced synaptic transistor with dual operation modes

Y Li, Y Yang, X Gao, J Yuan, G Zhu… - IEEE Electron …, 2016 - ieeexplore.ieee.org
We propose and fabricate a light induced transistor using a combination of two multiple-
quantum-well diodes (MQWDs) with a common n-electrode as the base. Both silicon …

Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching

T Yamada, Y Ando, H Watanabe… - Applied Physics …, 2021 - iopscience.iop.org
Photo-electrochemical (PEC) etching is a promising technique for fabricating GaN
microelectromechanical systems devices. In this study, we demonstrate the fabrication of …

Spatial audio acquisition using a dual-functioning MQW-diode with a three-stage amplifier circuit

J Fu, B Zhu, Z Shi, J Yuan, X Gao, Y Wang - Ieee Access, 2018 - ieeexplore.ieee.org
A multiple-quantum-well diode (MQW-diode) can function as a light-emitting diode or a
photodiode. In particular, when appropriately biased, this dual-functioning device can …

Free-standing GaN grating couplers and rib waveguide for planar photonics at telecommunication wavelength

Q Liu, W Wang - Optics & Laser Technology, 2018 - Elsevier
Abstract Gallium Nitride (GaN) free-standing planar photonic device at telecommunication
wavelength based on GaN-on-silicon platform was presented. The free-standing structure …

Circular GaN membrane gratings

Y Wang, Z Shi, X Li, M Lopez-Garcia… - IEEE Photonics …, 2014 - ieeexplore.ieee.org
This letter presents the fabrication and characterization of freestanding circular GaN gratings
on a GaN-on-silicon platform. Optical modes propagate within the freestanding GaN …

Residual stress distribution and deflection analysis of very thin GaN membrane supported devices

A Cismaru, A Müller, G Konstantinidis… - Journal of …, 2012 - iopscience.iop.org
This paper presents the deflection analysis and stress distribution in GaN membranes
supported devices. The influence of metallization thickness and type on the deflection and …

Design and fabrication of GaN crystal ultra-small lateral comb-drive actuators

T Tanae, H Sameshima, K Hane - … of Vacuum Science & Technology B, 2012 - pubs.aip.org
Ultra-small electromechanical comb-drive actuators made of GaN crystal were studied in
order to apply them to optical micro-electromechanical systems. Using GaN crystals grown …