Negative-Bias-Stress-Induced Current Instability in Quasi-2D Tellurium Field-Effect-Transistors
Quasi-2D Tellurium (Te), holds great promise for high performance p-type field-effect-
transistor (p-FET) in the future thanks to its high mobility and good stability. To pursue a …
transistor (p-FET) in the future thanks to its high mobility and good stability. To pursue a …
Ultrafast Characterization of Hole Trapping Near Black Phosphorus–SiO2 Interface During NBTI Stress in 2-D BP p-FETs
2-D p-channel FETs with black phosphorus (BP) channel and silicon dioxide (SiO 2) gate
oxide have been fabricated. An ultrafast characterization method (10-μs delay) is used to …
oxide have been fabricated. An ultrafast characterization method (10-μs delay) is used to …
Building fabrication-structure-application datacubes of 2D heterostructures
J Wang - 2020 - repositories.lib.utexas.edu
Researches on graphene and other two-dimensional (2D) layered materials remain
exponential growth, driven by the fundamental interests and potential applications. Isolated …
exponential growth, driven by the fundamental interests and potential applications. Isolated …