Negative-Bias-Stress-Induced Current Instability in Quasi-2D Tellurium Field-Effect-Transistors

Y Pang, W Liao, X Chen, T Rao, X Wang… - 2023 6th …, 2023 - ieeexplore.ieee.org
Quasi-2D Tellurium (Te), holds great promise for high performance p-type field-effect-
transistor (p-FET) in the future thanks to its high mobility and good stability. To pursue a …

Ultrafast Characterization of Hole Trapping Near Black Phosphorus–SiO2 Interface During NBTI Stress in 2-D BP p-FETs

N Goyal, S Mahapatra, S Lodha - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
2-D p-channel FETs with black phosphorus (BP) channel and silicon dioxide (SiO 2) gate
oxide have been fabricated. An ultrafast characterization method (10-μs delay) is used to …

Building fabrication-structure-application datacubes of 2D heterostructures

J Wang - 2020 - repositories.lib.utexas.edu
Researches on graphene and other two-dimensional (2D) layered materials remain
exponential growth, driven by the fundamental interests and potential applications. Isolated …