Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronics applications: A comprehensive review
In this review, we explore the last fifty years of Metal-Insulator-Semiconductor (MIS) Schottky
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …
Incorporation of Ba2+ ions on the properties of MoO3 thin films and fabrication of positive photo-response Cu/Ba–MoO3/p-Si structured diodes
Abstract Metal-insulator-semiconductor (MIS) structured Schottky barrier diodes (SBDs) are
the most significant device in optoelectronic device application. Here, we demonstrated a …
the most significant device in optoelectronic device application. Here, we demonstrated a …
Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti: DLC interlayer
This study emphasizes the possible current transport mechanisms (CTMs) of the Schottky
structure with Ti: DLC interlayer for a wide temperature interval (80–470 K). In the related …
structure with Ti: DLC interlayer for a wide temperature interval (80–470 K). In the related …
Jet Nebulizer Sprayed WO3-Nanoplate Arrays for High-Photoresponsivity Based Metal–Insulator–Semiconductor Structured Schottky Barrier Diodes
R Marnadu, J Chandrasekaran… - Journal of Inorganic and …, 2020 - Springer
Monoclinic WO 3-nanoplate arrays have been effectively deposited via simple jet nebulizer
spray pyrolysis technique at an optimized substrate temperature of 400° C. These WO 3 …
spray pyrolysis technique at an optimized substrate temperature of 400° C. These WO 3 …
Zirconia modified nanostructured MoO3 thin films deposited by spray pyrolysis technique for Cu/MoO3-ZrO2/p-Si structured Schottky barrier diode application
We report an inorganic aqueous solution route for pure molybdenum trioxide (MoO 3) and
zirconium oxide composite (MoO 3-ZrO 2) insulating layer of Cu/MoO 3-ZrO 2/p-Si metal …
zirconium oxide composite (MoO 3-ZrO 2) insulating layer of Cu/MoO 3-ZrO 2/p-Si metal …
A systematic influence of Cu doping on structural and opto-electrical properties of fabricated Yb2O3 thin films for Al/Cu-Yb2O3/p-Si Schottky diode applications
In the present work, transition metal doped rare earth metal oxide (Cu-Yb 2 O 3) thin films
have been effectively synthesized on a large scale using low-cost jet nebulizer spray …
have been effectively synthesized on a large scale using low-cost jet nebulizer spray …
Impedance Spectroscopy on Hafnium Oxide‐Based Memristive Devices
R Marquardt, F Zahari, J Carstensen… - Advanced Electronic …, 2023 - Wiley Online Library
Memristive devices for neuromorphic computing have been attracting ever growing attention
over the last couple of years. In neuromorphic electronics, memristive devices with multi …
over the last couple of years. In neuromorphic electronics, memristive devices with multi …
ReS2/h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory
B Mukherjee, R Hayakawa, K Watanabe… - Advanced Electronic …, 2021 - Wiley Online Library
A 2D heterostructure consisting of few‐layer direct bandgap ReS2, a thin h‐BN layer, and a
monolayer graphene (Gr) for application to various electronic devices is investigated. Metal …
monolayer graphene (Gr) for application to various electronic devices is investigated. Metal …
Forward and reverse bias current–voltage (I–V) characteristics in the metal–ferroelectric–semiconductor (Au/SrTiO3/n-Si) structures at room temperature
A Buyukbas-Ulusan, S Altındal-Yerişkin… - Journal of Materials …, 2018 - Springer
The main electrical parameters of fabricated Au/SrTiO 3/n-Si (MFS) structures have been
investigated by using various methods. The values of ideality factor (n) and zero-bias barrier …
investigated by using various methods. The values of ideality factor (n) and zero-bias barrier …
Rapid thermal annealing influences on microstructure and electrical properties of Mo/ZrO2/n-Si/Al MISM junction with a high-k ZrO2 insulating layer
The microstructural, chemical and electrical properties of Mo/ZrO 2/n-Si/Al metal/insulator/
semiconductor/metal (MISM) heterostructure with zirconium oxide (ZrO 2) as an insulating …
semiconductor/metal (MISM) heterostructure with zirconium oxide (ZrO 2) as an insulating …