Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

Remaining useful lifetime prediction and extension of Si power devices have been studied
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …

功率半导体器件作为电气化进程的核心组成部分, 其本身在不断迭代提升, 并促进电气化装置和
应用的发展. 功率半导体器件的关键技术主要体现在4 个方面: 新材料, 新结构, 新封装, 智能化 …

To clarify the current research situation and offer a better understanding of the reliability for
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …

Silicon carbide (SiC) based metal-oxide semiconductor-field-effect-transistors (MOSFETs)
show excellent switching performance and reliability. However, compared to silicon devices …

Accelerated terrestrial neutron irradiations were performed on different commercial SiC
power MOSFETs with planar, trench, and double-trench architectures. The results were used …

There is continuous activity to increase the efficiency and reduce the size of power electronic
systems and modules developed for transportation and automotive electrification …

In this article, commercially 1200-V asymmetric and double trench silicon carbide (SiC)
metal-oxide-semiconductor-field-effect transistors (mosfets) from two manufacturers are …

In this article, the repetitive avalanche ruggedness of silicon carbide metal–oxide–
semiconductor field-effect transistors (MOSFETs) with asymmetric trench (AT) and double …

The suboptimal performance and low channel-carrier mobility of silicon carbide (SiC) power
MOSFETs are attributed to a high density of oxide traps near the 4H-SiC/SiO2 interface. In …