Silicon carbide (SiC) is a promising semiconductor material which attracts huge attention
due to its wide bandgap, high thermal conductivity and great potential for electronic …

Understanding the deformation mechanism of a brittle material under mechanical loading is
of value for unveiling the material removal in an abrasive machining process. In this work …

The technology enhancement of obtaining 4H–SiC wafers with a concave Si face shape has
improved the performance of GaN-on-SiC. For manufacturers, the wafer shape has a …

As the representative of the third generation semiconductor materials, SiC has excellent
physical and chemical properties. With the development of materials and applications, SiC …

The atomic step morphology of the SiC (0001) surface is determined by the crystal structure
of SiC and reflects the real crystal morphology of the SiC substrate surface. The atomic step …

To investigate the influence of defects on the damage mechanism of 4H–SiC, this study
primarily conducted molecular dynamics simulations of a single diamond abrasive …

With the increasing attention of 4H-silicon carbide (4H-SiC) crystals in the applications of
high-power electronics, it has become necessary to further improve the development of the …

A more sophisticated simulation model is developed based on the principle of ray-tracing to
simulate the grazing-incidence synchrotron X-ray topographic contrast of dislocations lying …

The curving of crystal planes (CCP) in wide bandgap semiconductor wafers, caused by
thermal stress during crystal growth or wafer planarization processes, poses serious …

A study on characterization of microstructures in ammonothermal grown GaN wafers at
different stages of device fabrication is conducted using synchrotron monochromatic beam X …