A method for the manufacture of an insulated gate field effect semiconductor device
comprised of a semiconductor substrate, a gate insulating layer member having at least an …

In a dual plasma device, the first plasma is a microwave discharge having its own means of
plasma initiation and control. The microwave discharge operates at electron cyclotron …

57 ABSTRACT A method for forming a film by a plasma CVD process in which a high density
plasma is generated in the presence of a magnetic field is described, characterized by that …

The ability to deposit materials into high aspect ratio (AR) holes (holes with a depth to width
ratio greater than one) on a seniconductor substrate is becoming increasingly more …

[57] ABSTRACT _ A plasma generating apparatus for plasma processing applications is
based on a permanent magnet line-cusp plasma con? nement chamber coupled to a …

High density plasma is produced in a long cylindrical cavity by the excitation of a high
frequency whistler wave within the cavity. The cylindrical cavity, and hence the plasma, is …

An ion implanter is provided for implanting ions in a workpiece. The ion implanter includes
an apparatus for generating an ion beam and directing it toward a surface of a work piece …

An improved radiofrequency wave apparatus (10) which provides a relatively large diameter
(on the order of magnitude 500 millimeters) plasma (56) for the coating of a material on a …

A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz
coils, a microwave generator and gas feeding systems. An auxiliary magnet is further …

A plasma system is disclosed comprising a vessel suitable for containing a plasma at a
pressure of at least about 100 mtorr, a plasma gas in the vessel at a pressure of at least 100 …