A survey of spintronic architectures for processing-in-memory and neural networks

S Umesh, S Mittal - Journal of Systems Architecture, 2019 - Elsevier
The rising overheads of data-movement and limitations of general-purpose processing
architectures have led to a huge surge in the interest in “processing-in-memory”(PIM) …

An overview of in-memory processing with emerging non-volatile memory for data-intensive applications

B Li, B Yan, H Li - Proceedings of the 2019 on Great Lakes Symposium …, 2019 - dl.acm.org
The conventional von Neumann architecture has been revealed as a major performance
and energy bottleneck for rising data-intensive applications. The decade-old idea of …

From spintronic memristors to quantum computing

J Qin, B Sun, G Zhou, T Guo, Y Chen, C Ke… - ACS Materials …, 2023 - ACS Publications
The high-speed development of the Internet of Things and artificial intelligence is
revolutionizing the world in terms of industrial production, environmental protection, medical …

Two-pulse sub-ns switching scheme for advanced spin-orbit torque MRAM

V Sverdlov, A Makarov, S Selberherr - Solid-State Electronics, 2019 - Elsevier
The steady increase in performance and speed of modern integrated circuits is continuously
supported by constant miniaturization of complementary metal-oxide semiconductor (CMOS) …

Computing-in-memory using voltage-controlled spin-orbit torque based MRAM array

S Shreya, A Jain, BK Kaushik - Microelectronics Journal, 2021 - Elsevier
Abstract The Computing-in-Memory (CiM) is one of the best solutions to overcome the data
transferring limitation between memory and processor. Moreover, spintronics based devices …

In-memory direct processing based on nanoscale perpendicular magnetic tunnel junctions

K Cao, W Cai, Y Liu, H Li, J Wei, H Cui, X He, J Li… - Nanoscale, 2018 - pubs.rsc.org
Perpendicular magnetic tunnel junctions (p-MTJs) provide advantages such as infinite
endurance, high thermal stability, and fast and low-power switching. They are considered as …

Magnetoresistive circuits and systems: Embedded non-volatile memory to crossbar arrays

A Agrawal, C Wang, T Sharma… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
This overview article describes Magnetoresistive Random Access Memory (MRAM) from a
circuits and systems perspective. We discuss various tradeoffs and design challenges of …

Bnn training algorithm with ternary gradients and bnn based on mram array

Y Fujiwara, T Kawahara - TENCON 2023-2023 IEEE Region 10 …, 2023 - ieeexplore.ieee.org
Internet of Things (IoT) devices have only limited computing resources, which means we
need to reduce the scale of operation circuits and energy consumption to build a neural …

Field-free magnetic tunnel junction for logic operations based on voltage-controlled magnetic anisotropy

F Cutugno, E Garzón, R De Rose… - IEEE Magnetics …, 2021 - ieeexplore.ieee.org
This letter demonstrates how to perform logic operations on the data stored in magnetic
tunnel junction (MTJ) devices within a memory array, without any intermediate electronic …

Multiple-matrix vector multiplication with crossbar phase-change memory

L Wang, W Gao, L Yu, JZ Wu… - Applied Physics Express, 2019 - iopscience.iop.org
Vector multiplication involving multiple matrices is theoretically realized by a crossbar array
of conventional phase-change random-access memories whose device resistance can be …