HfO2-based ferroelectrics: From enhancing performance, material design, to applications
Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …
storage, and low energy consumption to fulfill the rapid developments of big data, the …
Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices
Ferroelectricity in fluorite-structure oxides, such as (doped) HfO2 and ZrO2, and their solid
solution, nanolaminates, and superlattices has attracted increasing interest for future …
solution, nanolaminates, and superlattices has attracted increasing interest for future …
The influence of top and bottom metal electrodes on ferroelectricity of hafnia
In recent years, several experimental approaches have been adopted to study and
understand the mechanism and improve the ferroelectricity of fluorite-type hafnia-based …
understand the mechanism and improve the ferroelectricity of fluorite-type hafnia-based …
Ultra-thin Hf0. 5Zr0. 5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization
We report on 4.5-nm-thick Hf 0.5 Zr 0.5 O 2 (HZO) thin-film-based ferroelectric tunnel
junctions (FTJs) with a tungsten (W) bottom electrode. The HZO on the W electrode exhibits …
junctions (FTJs) with a tungsten (W) bottom electrode. The HZO on the W electrode exhibits …
A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
In the present hyper-scaling era, memory technology is advancing owing to the demand for
high-performance computing and storage devices. As a result, continuous work on …
high-performance computing and storage devices. As a result, continuous work on …
Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors
This article highlights the role of HfO 2 seed/dielectric insertion layers on the ferroelectric
properties of hafnium zirconium oxide (HZO)-based metal-ferroelectric-metal (MFM) …
properties of hafnium zirconium oxide (HZO)-based metal-ferroelectric-metal (MFM) …
Physics, Structures, and Applications of Fluorite‐Structured Ferroelectric Tunnel Junctions
The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of
ferroelectricity in fluorite‐structured oxides such as HfO2 and ZrO2. In terms of thickness …
ferroelectricity in fluorite‐structured oxides such as HfO2 and ZrO2. In terms of thickness …
Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High …
We present herewith a novel approach of equally thick AFE/FE (ZrO2/HZO) bilayer stack
heterostructure films for achieving an equivalent oxide thickness (EOT) of 4.1 Å with a …
heterostructure films for achieving an equivalent oxide thickness (EOT) of 4.1 Å with a …
Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering
Hafnia-based ferroelectric tunnel junctions (FTJs) have great potential for use in logic in
nonvolatile memory because of their complementary metal–oxide–semiconductor process …
nonvolatile memory because of their complementary metal–oxide–semiconductor process …
Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process
The use of additional dielectric (DE) layers such as Al 2 O 3, ZrO 2, HfO 2 and Ta 2 O 5 with
Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric (FE) layer, namely bi-layer systems are drawing much …
Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric (FE) layer, namely bi-layer systems are drawing much …