Abstract Development of terahertz (THz) sources, detectors, and optical components has
been an active area of research across the globe. The interest in THz optoelectronics is …

Growing high-quality core-shell heterostructure nanowires is still challenging due to the
lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the …

This review summarizes the operational principles of Indium Arsenide (InAs) nanowire
photodetectors under different light conditions and the various approaches designed to …

Semiconductor nanowires (NWs) have shown evidence of robust hot-carrier effects due to
their small dimensions, making them attractive for advanced photoenergy conversion …

Extending the emission wavelength of III‐V nanowire (NW) lasers grown on silicon into the
mid‐infrared (MIR) spectral range has strong potential for applications. Examples include …

Hexagonal boron nitride (hBN) is a wide indirect bandgap semiconductor with a strong
luminescence that is many orders of magnitude higher than diamond. It holds great promise …

Internal quantum efficiency (IQE) is an important figure of merit for photoelectric applications.
While the InAs core/shell (c/s) nanowire (NW) is a promising solution for efficient quantum …

Low-bandgap semiconductor nanowires (NWs) attract considerable interest for mid-infrared
(MIR) photonics and optoelectronics, where ideal candidate materials require surface …

Marrying nanostructures with thin films is a recent trend in flexible optoelectronics to improve
light trapping and mechanical stability. Radial junction (RJ) a‐Si: H thin film optoelectronics …

Mid-wave infrared LEDs based on 6.1 Å III/V semiconductors have trailed well behind visible
LEDs in their wallplug efficiency. One contributing inefficiency is the low internal quantum …