The control over the spectral broadening of an ensemble of emitters, mainly attributable to
the size and shape dispersion and the homogenous broadening mechanisms, is crucial to …

We investigated droplet epitaxy of Ga (As) on In 0.53 Ga 0.47 As as a method to extract Ga-
adatom diffusion lengths with the aim of better understanding the underlying cause of phase …

In this work, we are dealing with the dropletepitaxially prepared quantum dots. This
technology is not only an alternative way of the strain induced technique to prepare quantum …

近年来, 半导体量子点特别是InAs 量子点的基本物理性质和潜在应用得到了广泛研究.
许多研究者利用InAs 量子点结构的改变以调制其光电特性. 本文采用液滴外延法在GaAs (001) …

In this work, we investigate the formation of the inverted technology created quantum dot by
a method based on droplet epitaxy. The preparation process of the so called inverted …

The eigenstates of a hydrogenic complex confined in a washer-shaped quantum ring with
lateral position-controllable protuberances with a Gaussian aspect under the presence of …

In this work, droplet epitaxially grown GaAs quantum dots on AlGaAs surface are studied.
The quantum dots are investigated in situ with RHEED and ex situ with TEM method. The …

This article presents an approach to the two-dimensional Schrödinger equation based on
automatic learning methods with neural networks. It is intended to determine the ground …

Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots
(QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the …

The paper deals with the kinetics of the droplet epitaxial GaAs quantum ring formation grown
on AlGaAs (001) surface. The observation is, that the aspect ratio of these nano structures is …