In this paper, we review the recent progress in the resistive random access memory
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …

This review article attempts to provide a comprehensive review of the recent progress in
cerium oxide (CeO2)-based resistive random-access memories (RRAMs). CeO2 is …

Recent discoveries of large magnetoresistance in non-magnetic semiconductors,,,,,,, have
gained much attention because the size of the effect is comparable to, or even larger than …

Linear transverse magnetoresistance is commonly observed in many material systems
including semimetals, narrow band-gap semiconductors, multi-layer graphene and …

The finding of an extremely large magnetoresistance effect on silicon based p–n junction
with vertical geometry over a wide range of temperatures and magnetic fields is reported. A …

Boron-doped Si-SiO 2-Al structures are fabricated to study extremely large
magnetoresistance (MR) effects. Current-voltage characteristics show a nonlinear behavior …

The crystal structure and magnetic properties of Pr 1-x Ca x MnO 3 (PCMO) were
investigated systematically. It is shown that the symmetry of the structure is improved with the …

We have studied the electron transport in SiO 2 (Co)/GaAs and SiO 2 (Co)/Si
heterostructures, where the SiO 2 (Co) structure is the granular SiO 2 film with Co …

This paper provides a comprehensive overview of the development of flux-driven Josephson
Parametric Amplifiers (JPAs) as Quantum Noise Limited Amplifier for axion search …

Exploring potential spintronic functionalities in resistive switching (RS) devices is of great
interest for creating new applications, such as multifunctional resistive random‐access …