Capacitors represent the largest obstacle to dynamic random-access memory (DRAM)
technology evolution because the capacitor properties govern the overall operational …

Novel hafnium oxide (HfO2)‐based ferroelectrics reveal full scalability and complementary
metal oxide semiconductor integratability compared to perovskite‐based ferroelectrics that …

Catalysis has optimized and improved production rates in many industrial processes.
Conventional catalysis plays a key role in the mass-production of otherwise difficult to obtain …

Fluorite structured ferroelectrics, such as (Hf, Zr) O2, attract much interest due to their
scalability and compatibility with complementary metal‐oxide semiconductors, which make …

Hafnia–zirconia (HfO2–ZrO2) solid solution thin films have emerged as viable candidates for
electronic applications due to their compatibility with Si technology and demonstrated …

Memristors enter a critical developmental stage where emerging large‐scale integration
methods face major challenges with severe switching instabilities in the oxide layer. Here …

Abstract Fluorite structured HfO 2 or ZrO 2 thin films have been intensively studied for
memory-and energy-related applications since their ferroelectricity was first reported in …

Ferroelectric tunnel junctions (FTJs) based on ultrathin HfO2 have great potential as a fast
and energy-efficient memory technology compatible with complementary metal oxide …

In order to develop an alternate high-k and low-loss dielectric material for high density
energy storage and gate oxide applications and to address the leakage current issues in …

In this paper, we propose a method to improve the performance of TiN/Hf 0.5 Zr 0.5 O 2
(HZO)/TiN Nano-capacitors used in memory devices. Instead of direct fabrication of the …