On the design of unilateral dual-loop feedback low-noise amplifiers with simultaneous noise, impedance, and IIP3 match

MP Van Der Heijden, LCN de Vreede… - IEEE Journal of Solid …, 2004 - ieeexplore.ieee.org
This work describes the theory and design of a nonenergetic dual-loop feedback low-noise
amplifier (LNA) that provides maximum unilateral gain and simultaneous noise and …

[图书][B] Linearization of CDMA receiver front-ends

V Aparin - 2005 - search.proquest.com
The CDMA receiver sensitivity can be significantly degraded by the cross modulation
distortion (XMD), which is generated primarily by the LNA. To analyze XMD, this dissertation …

Design and Fabrication of wideband low-noise amplification stage for COMINT

MH Go - The Journal of the Korea institute of electronic …, 2012 - koreascience.kr
In this paper, wideband two-stage amplification stage was designed, fabricated and
evaluated. The proposed amplification stage with a novel gain control method have a high …

Design of a 4.4 to 5 GHz LNA in 0.25-/spl mu/m SiGe BiCMOS technology

P Crippa, S Orcioni, F Ricciardi… - Proceedings of the 2003 …, 2003 - ieeexplore.ieee.org
This paper describes a low-noise amplifier (LNA), designed using a 0.25/spl mu/m SiGe
process, operating in the 4.45 GHz band. A power gain of 12.8 dB at 5 GHz has been …

A high performance unilateral 900 MHz LNA with simultaneous noise, impedance, and IP3 match

Burghartz - 2003 Proceedings of the Bipolar/BiCMOS Circuits …, 2003 - ieeexplore.ieee.org
This paper describes a novel current-feedback LNA design with C/sub bc/-neutralization.
The resulting unilateral amplifier stage is completed with out-of-band loading for improved …

차량용통합안테나모듈용증폭단에관한연구

고민호, 표승철, 박효달 - 한국전자통신학회논문지, 2009 - scholar.kyobobook.co.kr
본 논문에서는 통합 안테나 모듈에 사용되는 능동 증폭단을 설계, 제작하였다. 제작한 통합
능동모듈은 AM/FM 대역, T-DMB 대역 및 GPS 대역에서 적절한 이득과 낮은 잡음지수 특성을 …

A 1.2-V single-stage, SiGe BiCMOS low-noise amplifier at 5.8 GHz for wireless applications

M Pourakbar, P Langari, M Dousti… - … on Information and …, 2008 - ieeexplore.ieee.org
This paper describes a low voltage low noise amplifier (LNA), designed using 0.35 μm SiGe
BiCMOS process, targeting a center frequency of 5.8 GHz with a voltage supply 1.2 V. A …

A study on the amplification block for integrated antenna module applicable to vehicles

M Go, S Pyo, HD Park - The Journal of the Korea institute of …, 2009 - koreascience.kr
In this paper, we designed and fabricated the active amplification block for the integrated
antenna module. The fabricated amplification module have a proper gain and low noise …

具有頻帶外終端技術之WiMAX 低雜訊放大器設計

吳建銘, 楊能凱, 曹登揚, 李世明 - 高雄師大學報: 自然科學與科技類, 2008 - airitilibrary.com
本論文採用砷化鎵(GaAs) 擬態高電子移動率電晶體(PHEMT) 研製應用於全球互通微波存取(
WiMAX) 系統之2.6 GHz 高線性度低雜訊放大器混合式微波積體電路(HMIC). 因為WiMAX …

Cancellation of sub‐harmonic and second harmonic components to improve the linearity of a low‐power consumption LNA using SiGe HBT

F Iturbide‐Sanchez, H Jardon‐Aguilar… - Microwave and …, 2003 - Wiley Online Library
Three simple methods to improve the third‐order intercept point (IP3) of a low‐noise
amplifier (LNA) for personal communication systems (PCS) applications or CDMA cellular …