A review for compact model of graphene field-effect transistors
N Lu, L Wang, L Li, M Liu - Chinese Physics B, 2017 - iopscience.iop.org
Graphene has attracted enormous interests due to its unique physical, mechanical, and
electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved …
electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved …
A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High- Stacked Gate-Oxide Structure
A compact 2-D analytical model for electrical characteristics such as surface potential, drain
current, and threshold voltage of double-gate tunnel FET (DG TFETs) with a SiO 2/High-k …
current, and threshold voltage of double-gate tunnel FET (DG TFETs) with a SiO 2/High-k …
Surface potential and drain current analytical model of gate all around triple metal TFET
N Bagga, S Dasgupta - IEEE Transactions on Electron Devices, 2017 - ieeexplore.ieee.org
The impact of triple metal with unalike work functions on the gate all around (GAA) tunnel
FET is studied for the first time in this paper. An analytical model is introduced for surface …
FET is studied for the first time in this paper. An analytical model is introduced for surface …
Dual metal gate tunneling field effect transistors based on MOSFETs: a 2-D analytical approach
Z Ramezani, AA Orouji - Superlattices and Microstructures, 2018 - Elsevier
A novel 2-D analytical drain current model of novel Dual Metal Gate Tunnel Field Effect
Transistors Based on MOSFETs (DMG-TFET) is presented in this paper. The proposed …
Transistors Based on MOSFETs (DMG-TFET) is presented in this paper. The proposed …
Demonstration of a novel tunnel FET with channel sandwiched by drain
A novel double gate tunnel FET with channel sandwiched by drain (CSD-TFET) is proposed
and investigated in this paper. The proposed CSD-TFET consists of three differently doped …
and investigated in this paper. The proposed CSD-TFET consists of three differently doped …
2-D Si0. 8Ge0. 2 source double-gate pocket PTFET for low power application: Modeling and simulation
To process 1-bit of information the small supply voltage (V dd) and minimal leakage current
are needed for transistors. Subthreshold swing (SS) of 60 mV/dec at 300 K is the basic …
are needed for transistors. Subthreshold swing (SS) of 60 mV/dec at 300 K is the basic …
Modeling and simulation of 2-D SixGe (1-x) source dual-gate pocket NTFET
The energy consumed in computing one bit of information can be scaled down if the
transistor can operate at low supply voltage (V dd) and have low leakage current …
transistor can operate at low supply voltage (V dd) and have low leakage current …
Performance evaluation of a novel GAA Schottky junction (GAASJ) TFET with heavily doped pocket
The evolution of microelectronics industry is only possible through a combined effort of
device miniaturization, innovative device structures and improved material property retaining …
device miniaturization, innovative device structures and improved material property retaining …
An analytical model for a TFET with an n-doped channel operating in accumulation and inversion modes
The tunnel field-effect transistor (TFET) is an ambipolar device that conducts current with the
channel in both accumulation and inversion modes. Analytical expressions for the channel …
channel in both accumulation and inversion modes. Analytical expressions for the channel …
A new DG nanoscale TFET based on MOSFETs by using source gate electrode: 2D simulation and an analytical potential model
Z Ramezani, AA Orouji - Journal of the Korean Physical Society, 2017 - Springer
This paper suggests and investigates a double-gate (DG) MOSFET, which emulates tunnel
field effect transistors (M-TFET). We have combined this novel concept into a double-gate …
field effect transistors (M-TFET). We have combined this novel concept into a double-gate …