Modeling and optimization of Sb and N resonance states effect on the band structure of mismatched III-NV alloys using artificial neural networks
The physical properties of the low bandgap III-VN-Sb semiconductor elaborated on a GaAs
substrate were modeled. The effect of deformation owing to lattice mismatch was …
substrate were modeled. The effect of deformation owing to lattice mismatch was …
Bandgap energy modeling of the deformed ternary GaAs1-uNu by artificial neural networks
Appraising the bandgap energy of materials is a major issue in the field of band
engineering. To better understand the behavior of GaAs 1-u N u material, it is necessary to …
engineering. To better understand the behavior of GaAs 1-u N u material, it is necessary to …
Nanoscience and nanoengineering: advances and applications
AD Kelkar, DJC Herr, JG Ryan - 2014 - books.google.com
Reflecting the breadth of the field from research to manufacturing, Nanoscience and
Nanoengineering: Advances and Applications delivers an in-depth survey of emerging, high …
Nanoengineering: Advances and Applications delivers an in-depth survey of emerging, high …
Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy
Semiconductor nanowires have been identified as a viable technology for next-generation
infrared (IR) photodetectors with improved detectivity and detection across a range of …
infrared (IR) photodetectors with improved detectivity and detection across a range of …
Electronic band structure calculation of GaNAsBi alloys and effective mass study
Electronic band structures of GaN x As 1− x− y Bi y dilute nitrides–bismides have been
determined theoretically within the framework of the band anticrossing (BAC) model and k⋅ …
determined theoretically within the framework of the band anticrossing (BAC) model and k⋅ …
New Visible Light Absorbing Materials for Solar Fuels, Ga(Sbx)N1−x
S Sunkara, VK Vendra, JB Jasinski… - Advanced …, 2014 - Wiley Online Library
However, the current bottleneck in the practical implementation of this technology is
discovering a material that will simultaneously satisfy a number of criteria required for …
discovering a material that will simultaneously satisfy a number of criteria required for …
[HTML][HTML] Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy
PK Kasanaboina, E Ahmad, J Li, CL Reynolds… - Applied Physics …, 2015 - pubs.aip.org
Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount
of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were …
of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were …
Single-junction solar cells based on pin GaAsSbN heterostructures grown by liquid phase epitaxy
In this paper, we present single heterojunction pin GaAsSbN/GaAs solar cells grown by low-
temperature liquid-phase epitaxy (LPE)–this is of interest as a component of multi-junction …
temperature liquid-phase epitaxy (LPE)–this is of interest as a component of multi-junction …
Sb and N incorporation interplay in GaAsSbN/GaAs epilayers near lattice-matching condition for 1.0–1.16-eV photonic applications
As promising candidates for solar cell and photodetection applications in the range 1.0–1.16
eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this …
eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this …
Epitaxial high-yield intrinsic and Te-doped dilute nitride GaAsSbN nanowire heterostructure and ensemble photodetector application
Band gap engineering of GaAsSbN nanowires (NWs) grown by Ga-assisted molecular
beam epitaxy and demonstration of a Te-doped axial GaAsSbN NW-based Schottky barrier …
beam epitaxy and demonstration of a Te-doped axial GaAsSbN NW-based Schottky barrier …