Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …

We review and critique the recent developments on multifunctional oxide materials, which
are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this …

This study examines the dielectric properties of filled PVDF film and filled PVDF‐TrFE film
incorporated with 1, 3, 5, and 7 weight percentages of magnesium oxide (MgO) nanofillers …

The invention provides transient devices, including active and passive devices that
electrically and/or physically transform upon application of at least one internal and/or …

Solution-processed metal-oxide thin films with high dielectric constants (k) have been
extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this …

With scaling of the gate length downward to increase speed and density, the gate dielectric
thickness must also be reduced. However, this practice which has been in effect for many …

MgO-reduced graphene oxide nanocomposites (NCs) were synthesized by a simple two-
step chemical method. The microstructure, surface morphology, and composition of the …

The advent of nanotechnology has initiated a profound revolution in almost all spheres of
technology. The electronics industry is concerned with the ongoing miniaturization of …

In this work, the resistive switching characteristics of MgO/Al 2 O 3-based resistive random-
access memory (ReRAM) devices have been reported. Analysis shows the change in …

Dual topological insulator (DTI), which simultaneously hosts topological insulator (TI) and
topological crystalline insulator (TCI) phases, has attracted extensive attention since it has a …